S
Sunhee Lee
Researcher at Samsung
Publications - 26
Citations - 522
Sunhee Lee is an academic researcher from Samsung. The author has contributed to research in topics: Thin-film transistor & Dopant. The author has an hindex of 10, co-authored 26 publications receiving 415 citations. Previous affiliations of Sunhee Lee include Purdue University.
Papers
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Journal ArticleDOI
Effect of surface morphology on friction of graphene on various substrates
Dae-Hyun Cho,Lei Wang,Jin Seon Kim,Gwan Hyoung Lee,Gwan Hyoung Lee,Eok Su Kim,Sunhee Lee,Sang Yoon Lee,James Hone,Changgu Lee +9 more
TL;DR: The friction measurements revealed that graphene, once exfoliated from the bulk crystal, tends to maintain its corrugation level even after it is folded onto an atomically flat substrate and that ultra-flatness in both graphene and the substrate is required to achieve the intimate contact necessary for strong adhesion.
Journal ArticleDOI
Low-temperature synthesis of 2D MoS2 on a plastic substrate for a flexible gas sensor
Yuxi Zhao,Jeong Gyu Song,Gyeong Hee Ryu,Kyung Yong Ko,Whang Je Woo,Youngjun Kim,Dong-Hyun Kim,Jun Hyung Lim,Sunhee Lee,Zonghoon Lee,Jusang Park,Hyungjun Kim +11 more
TL;DR: MoS2 produced by low-temperature CVD was determined to possess a layered structure with good uniformity, stoichiometry, and a controllable number of layers, which has potential for burgeoning flexible and wearable nanotechnology applications.
Journal ArticleDOI
Suspended single-layer MoS2 devices
TL;DR: In this paper, the authors fabricated and characterized suspended single-layer MoS2 devices to investigate the substrate effect on the electrical properties of the devices, and observed that the suspended devices were annealed by joule heating and showed the performance improvement.
Journal ArticleDOI
Atomistic modeling of metallic nanowires in silicon
Hoon Ryu,Hoon Ryu,Sunhee Lee,Sunhee Lee,Bent Weber,Suddhasatta Mahapatra,Lloyd C. L. Hollenberg,Michelle Y. Simmons,Gerhard Klimeck +8 more
TL;DR: This work presents the first theoretical study of Si:P nanowires that are realistically extended and disordered, providing a strong theoretical foundation for the design and understanding of atomic-scale electronics.
Proceedings ArticleDOI
High performance gallium-zinc oxynitride thin film transistors for next-generation display applications
Tae Sang Kim,Hyun-Suk Kim,Joon Seok Park,Kyoung Seok Son,Eok Su Kim,Jong-Baek Seon,Sunhee Lee,Seok-Jun Seo,Sun Jae Kim,Sungwoo Jun,Kyung Min Lee,Dong-Jae Shin,Jaewook Lee,Chunhyung Jo,Sung-Jin Choi,Dong Myong Kim,Dae Hwan Kim,Myung-kwan Ryu,Seong-Ho Cho,Youngsoo Park +19 more
TL;DR: In order to achieve high mobility devices, various types of metal oxide semiconductors have been extensively studied, including the most popular In-Ga-Zn-O, with typical field effect mobilities ranging between 10 to 30 cm2/Vs as discussed by the authors.