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Sunhee Lee

Researcher at Samsung

Publications -  26
Citations -  522

Sunhee Lee is an academic researcher from Samsung. The author has contributed to research in topics: Thin-film transistor & Dopant. The author has an hindex of 10, co-authored 26 publications receiving 415 citations. Previous affiliations of Sunhee Lee include Purdue University.

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Journal ArticleDOI

Effect of surface morphology on friction of graphene on various substrates

TL;DR: The friction measurements revealed that graphene, once exfoliated from the bulk crystal, tends to maintain its corrugation level even after it is folded onto an atomically flat substrate and that ultra-flatness in both graphene and the substrate is required to achieve the intimate contact necessary for strong adhesion.
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Low-temperature synthesis of 2D MoS2 on a plastic substrate for a flexible gas sensor

TL;DR: MoS2 produced by low-temperature CVD was determined to possess a layered structure with good uniformity, stoichiometry, and a controllable number of layers, which has potential for burgeoning flexible and wearable nanotechnology applications.
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Suspended single-layer MoS2 devices

TL;DR: In this paper, the authors fabricated and characterized suspended single-layer MoS2 devices to investigate the substrate effect on the electrical properties of the devices, and observed that the suspended devices were annealed by joule heating and showed the performance improvement.
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Atomistic modeling of metallic nanowires in silicon

TL;DR: This work presents the first theoretical study of Si:P nanowires that are realistically extended and disordered, providing a strong theoretical foundation for the design and understanding of atomic-scale electronics.
Proceedings ArticleDOI

High performance gallium-zinc oxynitride thin film transistors for next-generation display applications

TL;DR: In order to achieve high mobility devices, various types of metal oxide semiconductors have been extensively studied, including the most popular In-Ga-Zn-O, with typical field effect mobilities ranging between 10 to 30 cm2/Vs as discussed by the authors.