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Hoon Ryu

Researcher at Korea Institute of Science and Technology Information

Publications -  87
Citations -  2147

Hoon Ryu is an academic researcher from Korea Institute of Science and Technology Information. The author has contributed to research in topics: Quantum dot & Electronic structure. The author has an hindex of 16, co-authored 80 publications receiving 1916 citations. Previous affiliations of Hoon Ryu include Korea Institute of Science and Technology & Purdue University.

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A single-atom transistor

TL;DR: This work presents atomic-scale images and electronic characteristics of these atomically precise devices and the impact of strong vertical and lateral confinement on electron transport and discusses the opportunities ahead for atomic- scale quantum computing architectures.
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Ohm's Law Survives to the Atomic Scale

TL;DR: By embedding phosphorus atoms within a silicon crystal with an average spacing of less than 1 nanometer, this work achieved a diameter-independent resistivity, which demonstrates ohmic scaling to the atomic limit.
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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks

TL;DR: The 3-D nanoelectronic MOdeling (NEMO 3D) tool has been developed to address the needs of device physics and material science at the atomic scale of novel nanostructured semiconductors as mentioned in this paper.
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Spin blockade and exchange in Coulomb-confined silicon double quantum dots

TL;DR: In a carefully characterized double donor-dot device, spin blockade of the first few electrons is directly observed and the effective exchange interaction between electron spins in coupled Coulomb-confined systems is measured.
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Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data

TL;DR: In this article, the NEMO 3-D simulations of a 15-million-atom system and electronic structure in a subset of 9 million atoms using the experimentally given nominal geometries, and without any further parameter adjustments, were presented.