S
Sylvain Monnoye
Researcher at L'Arche
Publications - 21
Citations - 196
Sylvain Monnoye is an academic researcher from L'Arche. The author has contributed to research in topics: Epitaxy & Quantum dot. The author has an hindex of 5, co-authored 18 publications receiving 180 citations.
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Journal ArticleDOI
Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy
Eva Monroy,E. Sarigiannidou,Frédéric Fossard,Noelle Gogneau,Edith Bellet-Amalric,Jean-Luc Rouvière,Sylvain Monnoye,Hugues Mank,Bruno Daudin +8 more
TL;DR: In this paper, the surface kinetics of N-face GaN during molecular-beam epitaxial growth were studied by investigating the Ga wetting and the surface morphology, and the optimum surface morphology was achieved when growth is performed at the Ga accumulation limit.
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Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots
TL;DR: In this article, the effect of vertical correlation on GaN/AlN quantum dots grown by plasma-assisted molecular-beam epitaxy using the modified Stranski-Krastanow growth mode was investigated.
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Surfactant effect of gallium during the growth of GaN on AlN(0001¯) by plasma-assisted molecular beam epitaxy
TL;DR: Based on reflection high-energy electron diffraction experiments, the authors demonstrated that for appropriate Ga fluxes and substrate temperature, a self-regulated 1 −ML-thick Ga excess film can be formed on the growing surface.
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Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende
Eva Monroy,M. Hermann,Eirini Sarigiannidou,T. Andreev,P. Holliger,Sylvain Monnoye,Hugues Mank,Bruno Daudin,Martin Eickhoff +8 more
TL;DR: In this article, the authors investigated the polytype conversion of a GaN film from N-face wurtzite (2H) to zinc-blende (3C) structure due to Mg doping during growth by plasma-assisted molecular-beam epitaxy.
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Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials
Marcin Zielinski,Catherine Moisson,Sylvain Monnoye,Hugues Mank,Thierry Chassagne,Sebastien Roy,Anne Elisabeth Bazin,Jean-François Michaud,Marc Portail +8 more
TL;DR: In this article, the state-of-the-art of silicon carbide and related materials polishing is summarized. And the problems related to the polishing of polycrystalline material and to the planarization of epilayers are discussed.