T. Kurafuji

TL;DR: In this article, the band gap and excitonic resonance energies of high-quality bulk single crystals, polycrystalline thin films, and epitaxial layers of CuInSe2 and CuGaSe2 were determined as a function of temperature by means of photoreflectance, optical absorption (OA), and photoluminescence measurements.

TL;DR: In this paper, the authors grow CuInSe 2 (CIS) films on (001)-oriented GaAs substrates by molecular beam epitaxy at substrate temperatures of T s = 350-550° C.

TL;DR: In this article, a photoluminescence spectrum dominated by sharp free exciton emissions has been observed for the first time from CuInSe2 films indicative of significant improvement in crystalline quality and substantial reduction in the point defect density.

TL;DR: The band gap of CuInSe2 epitaxial films was also determined to be Eg=1.046 eV at 2 K using the reported exciton binding energy of Eex=7 meV as mentioned in this paper.

TL;DR: In this paper, an ex-situ vacuum annealed CuInSe2 thin film with a range of CuIn ratios was grown by molecular beam epitaxy on GaAs (0 0 1) at substrate temperatures of Ts = 450-500°C and the effects of annealing under various atmospheres have been investigated.