T
T. S. Böscke
Researcher at Qimonda
Publications - 13
Citations - 4692
T. S. Böscke is an academic researcher from Qimonda. The author has contributed to research in topics: Ferroelectricity & Tetragonal crystal system. The author has an hindex of 11, co-authored 13 publications receiving 3292 citations.
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Journal ArticleDOI
Ferroelectricity in hafnium oxide thin films
TL;DR: In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.
Journal ArticleDOI
Ferroelectricity in Simple Binary ZrO2 and HfO2
Johannes Müller,T. S. Böscke,Uwe Schröder,Stefan Mueller,D. Bräuhaus,Ulrich Böttger,Lothar Frey,Thomas Mikolajick +7 more
TL;DR: A structural investigation revealed the orthorhombic phase to be of space group Pbc2(1), whose noncentrosymmetric nature is deemed responsible for the spontaneous polarization in this novel, nanoscale ferroelectrics.
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Ferroelectricity in yttrium-doped hafnium oxide
Johannes Müller,Uwe Schröder,T. S. Böscke,I. Müller,Ulrich Böttger,L. Wilde,Jonas Sundqvist,Martin Lemberger,P. Kücher,Thomas Mikolajick,Lothar Frey +10 more
TL;DR: In this article, structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented, based on X-ray diffraction.
Journal ArticleDOI
Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications
Johannes Müller,T. S. Böscke,D. Bräuhaus,Uwe Schröder,Ulrich Böttger,Jonas Sundqvist,P. Kücher,Thomas Mikolajick,Lothar Frey +8 more
TL;DR: In this article, the observation of ferroelectricity in capacitors based on hafnium-zirconium-oxide thin films of 7.5 to 9.5 nm thickness was reported.
Journal ArticleDOI
Phase transitions in ferroelectric silicon doped hafnium oxide
T. S. Böscke,St. Teichert,D. Bräuhaus,Johannes Müller,Uwe Schröder,Ulrich Böttger,Thomas Mikolajick +6 more
TL;DR: In this paper, phase transitions in ferroelectric silicon doped hafnium oxide (FE-Si:HfO2) were investigated by temperature dependent polarization and x-ray diffraction measurements.