Journal ArticleDOI
Ferroelectricity in hafnium oxide thin films
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TLDR
In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.Abstract:
We report that crystalline phases with ferroelectric behavior can be formed in thin films of SiO2 doped hafnium oxide. Films with a thickness of 10 nm and with less than 4 mol. % of SiO2 crystallize in a monoclinic/tetragonal phase mixture. We observed that the formation of the monoclinic phase is inhibited if crystallization occurs under mechanical encapsulation and an orthorhombic phase is obtained. This phase shows a distinct piezoelectric response, while polarization measurements exhibit a remanent polarization above 10 μC/cm2 at a coercive field of 1 MV/cm, suggesting that this phase is ferroelectric. Ferroelectric hafnium oxide is ideally suited for ferroelectric field effect transistors and capacitors due to its excellent compatibility to silicon technology.read more
Citations
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In-memory computing with resistive switching devices
TL;DR: This Review Article examines the development of in-memory computing using resistive switching devices, where the two-terminal structure of the devices, theirresistive switching properties, and direct data processing in the memory can enable area- and energy-efficient computation.
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Ferroelectricity in Simple Binary ZrO2 and HfO2
Johannes Müller,T. S. Böscke,Uwe Schröder,Stefan Mueller,D. Bräuhaus,Ulrich Böttger,Lothar Frey,Thomas Mikolajick +7 more
TL;DR: A structural investigation revealed the orthorhombic phase to be of space group Pbc2(1), whose noncentrosymmetric nature is deemed responsible for the spontaneous polarization in this novel, nanoscale ferroelectrics.
Journal ArticleDOI
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
Min Hyuk Park,Young Hwan Lee,Han Joon Kim,Yu Jin Kim,Taehwan Moon,Keum Do Kim,Johannes Müller,Alfred Kersch,Uwe Schroeder,Thomas Mikolajick,Cheol Seong Hwang +10 more
TL;DR: The coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.
Journal ArticleDOI
Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
Stefan Mueller,Johannes Mueller,Aarti Singh,Stefan Riedel,Jonas Sundqvist,Uwe Schroeder,Thomas Mikolajick +6 more
TL;DR: In this paper, a structural investigation of the electrically characterized capacitors by grazing incidence X-ray diffraction is presented in order to gain further insight on the potential origin of ferroelectricity.
Journal ArticleDOI
Resistive switching materials for information processing
Zhongrui Wang,Huaqiang Wu,Geoffrey W. Burr,Cheol Seong Hwang,Kang L. Wang,Qiangfei Xia,Jianhua Yang +6 more
TL;DR: This Review surveys the four physical mechanisms that lead to resistive switching materials enable novel, in-memory information processing, which may resolve the von Neumann bottleneck and examines the device requirements for systems based on RSMs.
References
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Journal ArticleDOI
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TL;DR: In this paper, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted, including those involving ternary phases.
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TL;DR: In this article, a review of the science and technology of HfO2 and hafnium-based materials in terms of processing, phase transformation, microstructure, and mechanical properties is presented.
Journal ArticleDOI
A Ferroelectric Oxide Made Directly on Silicon
Maitri Warusawithana,Cheng Cen,Charles R. Sleasman,Joseph C. Woicik,Yulan Li,Lena F. Kourkoutis,Jeffrey A. Klug,Hao Li,Philip Ryan,Li Peng Wang,Michael J. Bedzyk,David A. Muller,Long Qing Chen,Jeremy Levy,Darrell G. Schlom +14 more
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