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Tae Soo Kim

Researcher at KAIST

Publications -  18
Citations -  258

Tae Soo Kim is an academic researcher from KAIST. The author has contributed to research in topics: Medicine & van der Waals force. The author has an hindex of 5, co-authored 11 publications receiving 84 citations. Previous affiliations of Tae Soo Kim include Yonsei University.

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Journal ArticleDOI

Mechanoluminescent, Air-Dielectric MoS2 Transistors as Active-Matrix Pressure Sensors for Wide Detection Ranges from Footsteps to Cellular Motions.

TL;DR: This work reports fully-integrated, active-matrix arrays of pressure-sensitive MoS2 transistors with mechanoluminescent layers and air dielectrics for wide detectable range from footsteps to cellular motions that will provide a new strategy toward next-generation electronics at bio-machine interfaces to monitor various mechanical and biological phenomena at single-cell resolution.
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Switchable, Tunable, and Directable Exciton Funneling in Periodically Wrinkled WS2.

TL;DR: The results of broad tunability of the two-dimensional (2D) exciton funneling suggest a promising route to control exciton drift for enhanced optoelectronic performances and future 2D exciton devices.
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Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics.

TL;DR: This review describes the preparation method of layered materials and suggests interlayer engineering via intercalation as a method for the development of artificial crystal and inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions.
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Measurement of Quantum Yields of Monolayer TMDs Using Dye-Dispersed PMMA Thin Films

TL;DR: The convenient procedure proposed in this study for preparing the thin reference films and the simple protocol for the QY estimation may enable accurate comparisons of the absolute QYs between the 1L-TMD samples, thereby enabling the development of a method to improve the quantum yields of 1L -TMDs.
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A 2D material-based floating gate device with linear synaptic weight update

TL;DR: This study fabricate a top-gated flash memory device based on two-dimensional materials, MoS2 and graphene, as a channel and a floating gate, respectively, and Al2O3 and HfO2 to increase the tunneling efficiency and emulate spike timing-dependent plasticity (STDP), one of the learning rules in a spiking neural network (SNN).