Journal ArticleDOI
Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics.
Chanwoo Song,Gichang Noh,Gichang Noh,Tae Soo Kim,Min Soo Kang,Hwayoung Song,Ayoung Ham,Min-kyung Jo,Min-kyung Jo,Seorin Cho,Hyun-Jun Chai,Seong Rae Cho,Kiwon Cho,Jeongwon Park,Seungwoo Song,Intek Song,Sunghwan Bang,Joon Young Kwak,Kibum Kang +18 more
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TLDR
This review describes the preparation method of layered materials and suggests interlayer engineering via intercalation as a method for the development of artificial crystal and inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions.Abstract:
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting t...read more
Citations
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Journal Article
Quantum emission from hexagonal boron nitride monolayers
TL;DR: In this article, the authors demonstrate first room temperature and ultrabright single photon emission from a color center in two-dimensional multilayer hexagonal boron nitride.
Journal Article
Synthesis of WS2xSe2-2x alloy nanosheets with composition-tunable electronic properties
Xidong Duan,Chen Wang,Zheng Fan,Guolin Hao,Liangzhi Kou,Udayabagya Halim,Honglai Li,Xueping Wu,Yicheng Wang,Jian-Hui Jiang,Anlian Pan,Yu Huang,Ruqin Yu,Xiangfeng Duan +13 more
TL;DR: In this paper, the authors demonstrate a systematic control of the electronic properties of 2D-TMDs by creating mixed alloys of the intrinsically p-type WSe2 and intrinsically n-type WS2 with variable alloy compositions and show that a series of WS2xSe2-2x alloy nanosheets can be synthesized with fully tunable chemical compositions and optical properties.
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Black Phosphorus Field-effect Transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this paper, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
Memristor, Hodgkin-Huxley, and Edge of Chaos.
Leon O. Chua,Leon O. Chua +1 more
TL;DR: The memristor can be defined as any 2-terminal device that exhibits the fingerprints of "pinched" hysteresis loops in the v-i plane as discussed by the authors.
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Deterministic Quantum Emitter Formation in Hexagonal Boron Nitride via Controlled Edge Creation
TL;DR: This technique dramatically broadens the utility and convenience of hBN QEs and achieves a vital step toward the facile integration of the QEs into large-scale photonic, plasmonic, nanomechanical, or optoelectronic devices.
References
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Journal ArticleDOI
Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov,Andre K. Geim,Sergey V. Morozov,Da Jiang,Y. Zhang,S. V. Dubonos,Irina V. Grigorieva,A. A. Firsov +7 more
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI
A quantitative description of membrane current and its application to conduction and excitation in nerve
A. L. Hodgkin,A. F. Huxley +1 more
TL;DR: This article concludes a series of papers concerned with the flow of electric current through the surface membrane of a giant nerve fibre by putting them into mathematical form and showing that they will account for conduction and excitation in quantitative terms.
Journal ArticleDOI
Mastering the game of Go with deep neural networks and tree search
David Silver,Aja Huang,Chris J. Maddison,Arthur Guez,Laurent Sifre,George van den Driessche,Julian Schrittwieser,Ioannis Antonoglou,Veda Panneershelvam,Marc Lanctot,Sander Dieleman,Dominik Grewe,John Nham,Nal Kalchbrenner,Ilya Sutskever,Timothy P. Lillicrap,Madeleine Leach,Koray Kavukcuoglu,Thore Graepel,Demis Hassabis +19 more
TL;DR: Using this search algorithm, the program AlphaGo achieved a 99.8% winning rate against other Go programs, and defeated the human European Go champion by 5 games to 0.5, the first time that a computer program has defeated a human professional player in the full-sized game of Go.
Journal ArticleDOI
Atomically thin MoS2: a new direct-gap semiconductor
TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.