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Tcq Noakes

Researcher at Daresbury Laboratory

Publications -  126
Citations -  1743

Tcq Noakes is an academic researcher from Daresbury Laboratory. The author has contributed to research in topics: Scattering & Ion. The author has an hindex of 22, co-authored 122 publications receiving 1671 citations. Previous affiliations of Tcq Noakes include University of Warwick.

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A medium energy ion scattering study of the structure of Sb overlayers on Cu(111)

TL;DR: In this paper, medium energy ion scattering (MEIS) has been applied to a study of Sb overlayers on Cu(111), and the layer spacings of the Sb and Cu atoms relative to the outermost underlying Cu surface layer have been determined to be 2.52±0.13
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Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile

TL;DR: In this article, a method to accurately determine the sputter yield of the matrix from the earliest stages of a sputter profile is described using the technique of medium energy ion-scattering spectroscopy, which provides data that enable a depth scale to be established from subnanometer depths onward.
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The distribution of hydroxyl ions at the surface of anodic alumina

TL;DR: In this paper, the location of an oxygen-rich region at the outer surface of the oxide has been confirmed by medium-energy ion scattering (MEIS), and the information from these two techniques leads to the conclusion that a hydroxyl-containing surface region is responsible for this oxygenrich surface layer, MEIS revealing an approximately linear relationship between the total oxide thickness and the thickness of the hydroxy-rich surface region.
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Surface reconstructions of InSb(100) observed by scanning tunneling microscopy

TL;DR: A number of surface reconstructions formed on InSb(100) have been observed with atomic resolution using scanning tunneling microscopy (STM), and the coexistence of the different structures was also observed.
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Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

TL;DR: In this article, the influence of dynamic defect annealing on the damage formed in silicon substrates irradiated with ultralow energy ions (1 keV B+, 2.5 keV As+) was examined.