T
Tetsu Kachi
Researcher at Nagoya University
Publications - 181
Citations - 3983
Tetsu Kachi is an academic researcher from Nagoya University. The author has contributed to research in topics: Gallium nitride & Annealing (metallurgy). The author has an hindex of 26, co-authored 166 publications receiving 3201 citations. Previous affiliations of Tetsu Kachi include Toyota.
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Raman scattering from LO phonon‐plasmon coupled modes in gallium nitride
TL;DR: In this article, the authors measured the Ramaman spectra of n-type gallium nitride with different carrier concentrations and found that the phonon band shifted towards the high frequency side and broadened with an increase in carrier concentration.
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Thermal stress in gan epitaxial layers grown on sapphire substrates
TL;DR: In this article, the authors measured the curvature of wafer bending to measure the biaxial compressive stress in GaN epitaxial layers with different thicknesses grown on sapphire substrates by metalorganic vapor phase epitaxy using an AlN buffer layer.
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Recent progress of GaN power devices for automotive applications
TL;DR: In this article, a lateral GaN power device with a blocking voltage of 600 V and a vertical GaN Power Switching Device with a block voltage of 1200 V are proposed for medium power applications for sub-systems and high-power applications for the drive of main motors, respectively.
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GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
Masahito Kodama,Masahiro Sugimoto,Eiko Hayashi,Narumasa Soejima,Osamu Ishiguro,Masakazu Kanechika,Kenji Itoh,Hiroyuki Ueda,Tsutomu Uesugi,Tetsu Kachi +9 more
TL;DR: In this article, a novel method for fabricating trench structures on GaN was developed and a smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant.
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A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
Masakazu Kanechika,Masahiro Sugimoto,Narumasa Soejima,Hiroyuki Ueda,Osamu Ishiguro,Masahito Kodama,Eiko Hayashi,Kenji Itoh,Tsutomu Uesugi,Tetsu Kachi +9 more
TL;DR: In this article, a vertical insulated gate AlGaN/GaN heterojunction field effect transistor (HFET) was fabricated using a free-standing GaN substrate, which exhibited a specific on-resistance of as low as 2.6 mΩ·cm2 with a threshold voltage of -16 V.