T
Thierry Chassagne
Researcher at Centre national de la recherche scientifique
Publications - 66
Citations - 1348
Thierry Chassagne is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Silicon & Chemical vapor deposition. The author has an hindex of 21, co-authored 66 publications receiving 1250 citations. Previous affiliations of Thierry Chassagne include Claude Bernard University Lyon 1.
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Epitaxial graphene on cubic SiC(111)/Si(111) substrate
Abdelkarim Ouerghi,A. Kahouli,D. Lucot,Marc Portail,Laurent Travers,Jacques Gierak,Jose Penuelas,P. Jegou,Abhay Shukla,Thierry Chassagne,Marcin Zielinski +10 more
TL;DR: X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene (FLG) surface and confirm the graphitic composition and measuring the thickness of the FLG samples.
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Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide
F. Lafont,Rebeca Ribeiro-Palau,Dimitrios Kazazis,Adrien Michon,O. Couturaud,C. Consejo,Thierry Chassagne,Marcin Zielinski,Marc Portail,Benoit Jouault,Félicien Schopfer,W. Poirier +11 more
TL;DR: Graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range, and rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.
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Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition
Adrien Michon,Stéphane Vézian,Abdelkarim Ouerghi,Marcin Zielinski,Thierry Chassagne,Marc Portail +5 more
TL;DR: In this article, the authors proposed to grow few-layer graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor, and they showed that propane allows to grow a few layer graphene (FLG) on 6H-SiC(0001).
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Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates.
TL;DR: In this article, the impact of the nucleation step on the final crystalline quality of 3C-SiC heteroepitaxial films grown on (111) and (100) oriented silicon substrates by low pressure chemical vapor deposition was investigated by means of x-ray diffraction, scanning electron, atomic force and optical microscopies.
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Evidence of electrical activity of extended defects in 3C-SiC grown on Si
Xi Song,Jean-François Michaud,Frédéric Cayrel,Marcin Zielinski,Marc Portail,Thierry Chassagne,Emmanuel Collard,Daniel Alquier +7 more
TL;DR: In this paper, the authors demonstrate the high electrical activity of extended defects found in 3C-SiC heteroepitaxially grown layer on (100) silicon substrates.