Adrien Michon

TL;DR: In this article, the effect of growth and design parameters on the performance of Si-doped GaN/AlN multiquantum-well (MQW) structures for inter-band optoelectronics in the near infrared was studied.

TL;DR: The measured agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs, with an ultimate uncertainty of 8.2 × 10(-11), supports the universality of the quantum Hall effect and provides evidence of the relation of the quantify Hall resistance with h and e, crucial for the new Système International d'unités to be based on fixing such fundamental constants of nature.

TL;DR: Graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range, and rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.

TL;DR: In this article, the authors proposed to grow few-layer graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor, and they showed that propane allows to grow a few layer graphene (FLG) on 6H-SiC(0001).

TL;DR: In this article, the growth and structure of epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers using low-energy electron microscopy was reported.