T
Thomas F. Kuech
Researcher at University of Wisconsin-Madison
Publications - 640
Citations - 13102
Thomas F. Kuech is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Epitaxy & Metalorganic vapour phase epitaxy. The author has an hindex of 55, co-authored 638 publications receiving 12426 citations. Previous affiliations of Thomas F. Kuech include Corning Inc. & Pennsylvania State University.
Papers
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Journal ArticleDOI
Characteristics of GaAsN/GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates
A.A. Khandekar,B. E. Hawkins,Thomas F. Kuech,Jeng-Ya Yeh,Luke J. Mawst,Jerry R. Meyer,Igor Vurgaftman,Nelson Tansu +7 more
TL;DR: In this paper, the superlattice peaks in the x-ray diffraction θ-2θ scans around the (400) GaAs peak were fitted using a dynamical simulation model to determine layer thickness and alloy compositions.
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Metalorganic vapor phase epitaxy of II–VI materials for visible light emitters
Thomas F. Kuech,N. R. Perkins +1 more
TL;DR: The metalorganic vapor phase epitaxial (MOVPE) growth of II-VI compounds for visible light-emitting structures is complicated by a variety of growth chemistry, defect, and doping issues as discussed by the authors.
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Time-dependent heterointerfacial band bending and quasi-two-dimensional excitonic transport in GaAs structures
G. D. Gilliland,M. S. Petrovic,H. P. Hjalmarson,D. J. Wolford,G. A. Northrop,Thomas F. Kuech,Leigh M. Smith,J. A. Bradley +7 more
TL;DR: Using a time-resolved photoluminescence imaging technique with high spectral, temporal, and spatial resolution, the authors measured the time and carrier density-dependent heterointerfacial band bending in GaAs/Al{sub x}Ga{sub 1{minus}x}As structures, and its influence on quasi-two-dimensional exciton transport.
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Chemical investigations of GaAs wafer bonded interfaces
TL;DR: In this article, the bonding chemistry of various GaAs-to-oxide/GaAs bonded samples was investigated using multiple internal transmission Fourier transform infrared spectroscopy for thermally annealed and thermocompression-annealed samples.
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The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p‐GaAs
TL;DR: In this paper, the authors investigated the temperature dependence of the contact resistivity of the Si/Ni nonspiking contact scheme on p-GaAs and showed that the dominant resistivity is due to the high-low junction formed between the highly doped regrown GaAs layer and the substrate.