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Thomas F. Kuech

Researcher at University of Wisconsin-Madison

Publications -  640
Citations -  13102

Thomas F. Kuech is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Epitaxy & Metalorganic vapour phase epitaxy. The author has an hindex of 55, co-authored 638 publications receiving 12426 citations. Previous affiliations of Thomas F. Kuech include Corning Inc. & Pennsylvania State University.

Papers
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Journal ArticleDOI

Effects of Gas switching sequences on GaAs/GaAs1−ySby superlattices

B. E. Hawkins, +4 more
- 10 Dec 2004 - 
TL;DR: In this article, the interlayer structure of GaAs/GaAs 1-y Sb y superlattices was modified through changes in the inter-layer gas switching sequence.
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Surface morphology of carbon-doped GaAs grown by MOVPE

Jiang Li, +1 more
- 01 Jan 1997 - 
TL;DR: In this paper, the development of the surface structures of carbon-doped epitaxial GaAs layers grown by metalorganic vapor phase epitaxy was investigated by atomic force microscopy (AFM).
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Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure

Thomas D. Culp, +5 more
- 01 Jul 1997 - 
TL;DR: The photoluminescence properties of metal-organic chemical vapor deposition GaAs:Er were investigated as a function of temperature and applied hydrostatic pressure in this paper, where the 4I13/2→4I15/2Er3+emission energy was largely independent of pressures up to 56 kbar and temperatures between 12 and 300 K.
Patent

Silicon dopant source in intermetallic semiconductor growth operations

Thomas F. Kuech, +1 more
TL;DR: In intermetallic semiconductor crystal growth such as the growth of GaAs and GaAlAs, silicon as a dopant can be introduced more efficiently and evenly when provided as a gaseous hydride based compound involving a molecule where there are joined silicon atoms such as Si 2 H 6 to Si 5 H 12.
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Comparison of transport, recombination, and interfacial quality in molecular beam epitaxy and organometallic vapor‐phase epitaxy GaAs/AlxGa1−xAs structures

D. J. Wolford, +7 more
- 14 Mar 1994 - 
TL;DR: In this paper, the authors studied free-carrier recombination and transport in GaAs structures prepared by different epitaxial growth techniques and with different surface barriers, including molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy(OMVPE) prepared undoped, symmetric GaAs/Al0.3Ga0.7As double heterostructures.