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Tianjun Cao

Researcher at Nanjing University

Publications -  22
Citations -  1580

Tianjun Cao is an academic researcher from Nanjing University. The author has contributed to research in topics: Graphene & Impact ionization. The author has an hindex of 13, co-authored 20 publications receiving 1007 citations.

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Robust memristors based on layered two-dimensional materials

TL;DR: In this paper, the authors reported the realization of robust memristors for the first time based on van der Waals heterostructure of fully layered 2D materials and demonstrated a good thermal stability lacking in traditional memristor.
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Robust memristors based on layered two-dimensional materials

TL;DR: In this paper, robust memristors with good thermal stability, which is lacking in traditional memristor, can be created from a van der Waals heterostructure composed of graphene.
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Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions

TL;DR: It is shown that a homojunction device made from two-dimensional tungsten diselenide can exhibit diverse field-effect characteristics controlled by polarity combinations of the gate and drain voltage inputs, which suggests that the devices could be cascaded to create complex circuits.
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Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures

TL;DR: The transport measurements suggest that the breakdown originates from a ballistic avalanche phenomenon, where the sub-MFP BP channel support the lattice impact ionization by electrons and holes and the abrupt current amplification without scattering from the obstacles in a deterministic nature.
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Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures.

TL;DR: In this paper, the authors report the observation of ballistic avalanche phenomena in sub-mean free path (MFP) scaled vertical InSe/black phosphorus (BP) heterostructures and use these heterojunctions to fabricate avalanche photodetectors (APDs) with a sensitive mid-infrared light detection (4μm wavelength) and impact ionization transistors with a steep subthreshold swing (<0.25mV) with high gain, low bias and superior noise performance.