T
Tigran T. Mnatsakanov
Researcher at Moscow Power Engineering Institute
Publications - 57
Citations - 1018
Tigran T. Mnatsakanov is an academic researcher from Moscow Power Engineering Institute. The author has contributed to research in topics: Diode & Thyristor. The author has an hindex of 16, co-authored 57 publications receiving 987 citations.
Papers
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Journal ArticleDOI
Carrier mobility model for GaN
Tigran T. Mnatsakanov,Michael E. Levinshtein,Lubov I Pomortseva,S. N. Yurkov,Grigory Simin,M. Asif Khan +5 more
TL;DR: In this article, a simple analytical approximation has been obtained to describe the temperature and concentration dependencies of the low-field mobility in gallium nitride (GaN) in wide temperature (50⩽ T ⩽1000 K) and concentration (10 14 N 10 19 cm −3 ) ranges.
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Investigation of the effect of nonlinear physical phenomena on charge carrier transport in semiconductor devices
TL;DR: In this paper, a generalized form of the Einstein relation in the case of a strong electron-hole scattering is established, which enables the calculation of an effective algorithm for the solution of basic transport equations.
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"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes
M. E. Levinshtein,Tigran T. Mnatsakanov,Pavel Ivanov,John W. Palmour,Sergey Rumyantsev,Ranbir Singh,S. N. Yurkov +6 more
TL;DR: In this article, a qualitative analysis and a computer simulation have been carried out to clarify the origin of the contradictions in the minority carrier lifetime measurements for 4H-SiC p/sup +/n diodes with 6 kV blocking capability.
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Carrier mobility model for simulation of SiC-based electronic devices
TL;DR: In this article, simple analytical approximations are proposed for describing the temperature and concentration dependences of low-field mobility in the main polytypes of silicon carbide (SiC): 6H, 4H and 3C in wide ranges of temperatures and concentration.
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Semiempirical Model of Carrier Mobility in Silicon Carbide for Analyzing Its Dependence on Temperature and Doping Level
TL;DR: In this paper, a semi-empirical model is proposed for describing the dependence of the majority carrier mobility on temperature and doping level, which can be applied to model characteristics of multilayer silicon carbide structures.