Journal ArticleDOI
Carrier mobility model for GaN
Tigran T. Mnatsakanov,Michael E. Levinshtein,Lubov I Pomortseva,S. N. Yurkov,Grigory Simin,M. Asif Khan +5 more
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TLDR
In this article, a simple analytical approximation has been obtained to describe the temperature and concentration dependencies of the low-field mobility in gallium nitride (GaN) in wide temperature (50⩽ T ⩽1000 K) and concentration (10 14 N 10 19 cm −3 ) ranges.Abstract:
Simple analytical approximation has been obtained to describe the temperature and concentration dependencies of the low-field mobility in gallium nitride (GaN) in wide temperature (50⩽ T ⩽1000 K) and concentration (10 14 ⩽ N ⩽10 19 cm −3 ) ranges. The dependence of the temperature T m at which the mobility μ is at a maximum on the doping level is also obtained. Results obtained can be directly used for computer simulation of GaN-based devices.read more
Citations
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Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy
TL;DR: A catalyst-free method for growing self-assembled GaN wires on c-plane sapphire substrates by metal-organic vapour phase epitaxy is developed, and detailed study of the growth mechanisms shows that a combination of key parameters is necessary to obtain vertical growth.
Journal ArticleDOI
Finite element simulations of compositionally graded InGaN solar cells
TL;DR: In this paper, the solar power conversion efficiency of compositionally graded In x Ga 1− x N solar cells was simulated using a finite element approach, and the authors predicted 28.9% efficiency for a p-GaN/n-In x Ga N 1−x N/n −In 0.5 Ga 0.
Journal ArticleDOI
First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
TL;DR: This article reviews the most recent developments in the area of ab initio calculations of carrier mobilities of semiconductors and discusses the extension of the methodology to study spintronics and topological materials and the possibility of incorporating Berry-phase effects and many-body correlations beyond the standard Boltzmann formalism.
Journal ArticleDOI
Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency
TL;DR: In this article, an analytic model for the droop in the efficiency-versus-current curve for light-emitting diodes (LEDs) made from semiconductors having strong asymmetry in carrier concentration and mobility is developed.
Journal ArticleDOI
An electron mobility model for wurtzite GaN
TL;DR: In this article, a comprehensive model for the electron mobility in wurtzite (hexagonal) GaN is developed, which describes the dependence of the mobility on carrier concentration, temperature, and electric field.
References
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Book
Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.
Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Book
Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe
TL;DR: The Brillouin Zone for Wurtzite Crystal is defined in this paper, as the first zone for Zinc Blende Crystal, which is a type of hexagonal crystal.
Journal ArticleDOI
Carrier mobilities in silicon empirically related to doping and field
D.M. Caughey,R.E. Thomas +1 more
TL;DR: In this article, the experimental dependence of carrier mobilities on doping density and field strength in silicon has been investigated and the curve-fitting procedures are described, which fit the experimental data.
Journal ArticleDOI
Activation energies of si donors in gan
TL;DR: In this article, the electronic properties of Si donors in heteroepitaxial layers of GaN were investigated by variable temperature Hall effect measurements and photoluminescence (PL) spectroscopy.
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