Tim Echtermeyer

TL;DR: In this article, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated, where a conventional top-down CMOS-compatible process flow is applied.

TL;DR: Graphene-based photodetectors can be increased by up to 20 times, because of efficient field concentration in the area of a p-n junction, and wavelength and polarization selectivity can be achieved by employing nanostructures of different geometries.

TL;DR: A detailed analysis shows that the long-range corrugation of the substrate is also visible on graphene, but with a reduced amplitude, leading to the conclusion that the graphene is partly freely suspended between hills of the substrates.

TL;DR: In this article, a new approach was proposed to engineer a band gap in graphene field effect transistors (FEDs) by controlled structural modification of the graphene channel itself, where the conductance in the FEDs was switched between a conductive ldquoon-staterdquo and an insulating ld-quooff-state-of-the-art transistors with more than six orders of magnitude difference in conductance.

TL;DR: In this paper, the wavelength and polarization-dependent measurements of metal-graphene-metal photodetectors were performed to quantify and control the relative contributions of both photothermo- and photoelectric effects, adding to the overall photoresponse.