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Torsten Fritz

Researcher at University of Jena

Publications -  167
Citations -  6875

Torsten Fritz is an academic researcher from University of Jena. The author has contributed to research in topics: Scanning tunneling microscope & Monolayer. The author has an hindex of 38, co-authored 152 publications receiving 6329 citations. Previous affiliations of Torsten Fritz include University of Hong Kong & Max Planck Society.

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Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition : an experimental and computational study

TL;DR: It is demonstrated that the application of an electric field during the plasma step results in an increased energy transfer between energetic ions and the surface, directly influencing relevant surface reactions and leads to SiO2 thin films with significantly improved properties comparable to films grown by ion beam sputtering.
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Conducting polymer diffraction gratings on gold surfaces created by microcontact printing and electropolymerization at submicron length scales.

TL;DR: Simulations of DE were conducted for various combinations of conducting polymer refractive index andgrating depth, to compute sensitivity parameters, which are maximized when the grating depth is ca.
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Alkali Metal Doped Organic Molecules on Insulators: Charge Impact on the Optical Properties

TL;DR: Alkali Metal Doped Organic Molecules on Insulators: Charge Impact on the Optical Properties by Thomas Dienel, Andreas Krause, Ronald Alle, Roman Forker, Klaus Meerholz, and Torsten Fritz.
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Optical observation of different conformational isomers in rubrene ultra-thin molecular films on epitaxial graphene

TL;DR: In this paper, optical differential reflectance spectroscopy in combination with low-energy electron diffraction and scanning tunneling microscopy is used to investigate (ultra-)thin rubrene films grown on epitaxial graphene.
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Ballistic electron transport through titanylphthalocyanine films

TL;DR: In this article, the presence of the organic semiconductor increases the BEEM threshold voltage compared to reference Au∕GaAs diodes, and the Schottky barrier heights are measured for various temperatures.