T
Tsutomu Uesugi
Researcher at Toyota
Publications - 97
Citations - 1743
Tsutomu Uesugi is an academic researcher from Toyota. The author has contributed to research in topics: Layer (electronics) & Semiconductor device. The author has an hindex of 21, co-authored 92 publications receiving 1495 citations. Previous affiliations of Tsutomu Uesugi include Nagoya University & Nagoya Institute of Technology.
Papers
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Journal ArticleDOI
Mg-implanted bevel edge termination structure for GaN power device applications
M. Matys,Takashi Ishida,Kyung Pil Nam,Hideki Sakurai,Tetsuo Narita,Tsutomu Uesugi,Michal Bockowski,Michal Bockowski,Jun Suda,Tetsu Kachi +9 more
TL;DR: In this article, the edge termination for GaN-based one-sided abrupt p-n junctions is demonstrated using a combination of a shallow negative bevel mesa and selective-area p-type doping under the mesa.
Journal ArticleDOI
Shockley-Read-Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p-n + junction diodes
Takuya Maeda,Tetsuo Narita,Hiroyuki Ueda,Masakazu Kanechika,Tsutomu Uesugi,Tetsu Kachi,Tsunenobu Kimoto,Masahiro Horita,Masahiro Horita,Jun Suda,Jun Suda +10 more
TL;DR: In this article, the authors analyzed forward currentvoltage (I-V) characteristics in GaN-on-GaN p-n+ junction diodes with mesa-isolation structure and obtained an SRH lifetime of 46 ps at 298 K.
Patent
Insulated gate semiconductor device and fabrication method therefor
Tsutomu Uesugi,Masahito Kodama +1 more
TL;DR: In this article, the double-gate structure was used to reduce channel resistance, JFET resistance, and epitaxial resistance of the on-resistance of the power MOSFET, and implements an adequate breakdown voltage due to the effect of gate bias.
Journal ArticleDOI
Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement
Takashi Katsuno,Takaaki Manaka,Tsuyoshi Ishikawa,Hiroyuki Ueda,Tsutomu Uesugi,Mitsumasa Iwamoto +5 more
TL;DR: In this article, two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced secondharmonic generation (EFISHG) measurements.
Journal ArticleDOI
Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings
M. Matys,Takashi Ishida,Kyung Pil Nam,Hideki Sakurai,Keita Kataoka,Tetsuo Narita,Tsutomu Uesugi,Michal Bockowski,Michal Bockowski,Tomoaki Nishimura,Jun Suda,Tetsu Kachi +11 more