U
U. Haak
Publications - 11
Citations - 447
U. Haak is an academic researcher. The author has contributed to research in topics: CMOS & BiCMOS. The author has an hindex of 9, co-authored 11 publications receiving 441 citations.
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Proceedings ArticleDOI
Novel collector design for high-speed SiGe:C HBTs
Bernd Heinemann,Holger Rucker,R. Barth,J. Bauer,D. Bolze,E. Bugiel,J. Drews,K.E. Ehwald,Thomas Grabolla,U. Haak,W. Hoppner,D. Knoll,D. Krüger,B. Kuck,R. Kurps,M. Marschmeyer,H.H. Richter,Peter Schley,D. Schmidt,R. Scholz,Bernd Tillack,Wolfgang Winkler,D. Wolnsky,H.-E. Wulf,Yuji Yamamoto,Peter Zaumseil +25 more
TL;DR: In this paper, a collector design for high-frequency SiGe:C HBTs without deep trenches and with low-resistance collectors formed by high-dose ion implantation after shallow trench formation was described.
Proceedings ArticleDOI
A 0.13µm SiGe BiCMOS technology featuring f T /f max of 240/330 GHz and gate delays below 3 ps
Holger Rucker,Bernd Heinemann,Wolfgang Winkler,R. Barth,J. Borngraber,J. Drews,G. G. Fischer,A. Fox,Thomas Grabolla,U. Haak,D. Knoll,F. Korndorfer,Andreas Mai,Steffen Marschmeyer,Peter Schley,D. Schmidt,J. Schmidt,K. Schulz,Bernd Tillack,D. Wolansky,Yuji Yamamoto +20 more
TL;DR: In this paper, a 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented, which features high-speed HBTs (f T =240 GHz, f max =330 GHz, BV CEO =1.7 V) along with high-voltage high-frequency HBT (fT =50 GHz, F max =130 GHz, BS CEO =3.7V) integrated in a dual-gate, triple-well RF-CMOS process.
Proceedings ArticleDOI
A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module
D. Knoll,K.E. Ehwald,Bernd Heinemann,A. Fox,K. Blum,Holger Rucker,F. Furnhammer,B. Senapati,R. Barth,U. Haak,W. Hoppner,J. Drews,R. Kurps,Steffen Marschmeyer,H.H. Richter,Thomas Grabolla,B. Kuck,O. Fursenko,Peter Schley,R. Scholz,Bernd Tillack,Yuji Yamamoto,K. Kopke,H.-E. Wulf,D. Wolansky,Wolfgang Winkler +25 more
TL;DR: In this paper, the authors demonstrate an extremely simple, flexible, and hence low-cost SiGe:C BiCMOS process with ample performance for the majority of high volume applications, which offers three HBT devices with f/sub T/BV/sub CEO/ values of 28 GHz/67 GHz/7.5 V, 52 GHz/98 GHz/3.8 V, and 75 GHz/ 90 GHz/2.4 V by adding only one mask to the underlying CMOS process.
Proceedings ArticleDOI
A low-parasitic collector construction for high-speed SiGe:C HBTs
Bernd Heinemann,R. Barth,D. Bolze,J. Drews,P. Formanek,Thomas Grabolla,U. Haak,W. Hoppner,D.K. Kopke,B. Kuck,R. Kurps,Steffen Marschmeyer,H.H. Richter,Holger Rucker,Peter Schley,D. Schmidt,Wolfgang Winkler,D. Wolansky,H.-E. Wulf,Yuji Yamamoto +19 more
TL;DR: In this article, a new collector construction for high-speed SiGe:C HBTs was proposed that substantially reduces the parasitic base collector capacitance by selectively underetering of the collector region.
Proceedings ArticleDOI
A complementary BiCMOS technology with high speed npn and pnp SiGe:C HBTs
Bernd Heinemann,R. Barth,D. Bolze,J. Drews,P. Formanek,O. Fursenko,M. Glante,K. Glowatzki,A. Gregor,U. Haak,W. Hoppner,D. Knoll,R. Kurps,Steffen Marschmeyer,S. Orlowski,Holger Rucker,Peter Schley,D. Schmidt,R. Scholz,Wolfgang Winkler,Yuji Yamamoto +20 more
TL;DR: SiGe:C pnp HBTs in a complementary bipolar CMOS flow with f/sub T//f/sub max/ values of 80 GHz/120 GHz at BV/sub CEO/ = 26 V and a ring oscillator delay of 89 ps were demonstrated in this paper.