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Wolfgang Winkler
Researcher at Innovations for High Performance Microelectronics
Publications - 131
Citations - 2241
Wolfgang Winkler is an academic researcher from Innovations for High Performance Microelectronics. The author has contributed to research in topics: Voltage-controlled oscillator & BiCMOS. The author has an hindex of 25, co-authored 123 publications receiving 2072 citations.
Papers
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Journal ArticleDOI
A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f $_{T} $ /f $_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps
Holger Rucker,Bernd Heinemann,Wolfgang Winkler,R. Barth,J. Borngraber,Juergen Drews,G.G. Fischer,A. Fox,Thomas Grabolla,Ulrich Haak,Dieter Knoll,Falk Korndörfer,Andreas Mai,Steffen Marschmeyer,Peter Schley,Daniel Schmidt,J. Schmidt,Markus Andreas Schubert,K. Schulz,Bernd Tillack,Dirk Wolansky,Yuji Yamamoto +21 more
TL;DR: A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented and ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.
Proceedings ArticleDOI
Novel collector design for high-speed SiGe:C HBTs
Bernd Heinemann,Holger Rucker,R. Barth,J. Bauer,D. Bolze,E. Bugiel,J. Drews,K.E. Ehwald,Thomas Grabolla,U. Haak,W. Hoppner,D. Knoll,D. Krüger,B. Kuck,R. Kurps,M. Marschmeyer,H.H. Richter,Peter Schley,D. Schmidt,R. Scholz,Bernd Tillack,Wolfgang Winkler,D. Wolnsky,H.-E. Wulf,Yuji Yamamoto,Peter Zaumseil +25 more
TL;DR: In this paper, a collector design for high-frequency SiGe:C HBTs without deep trenches and with low-resistance collectors formed by high-dose ion implantation after shallow trench formation was described.
Journal ArticleDOI
High-Performance BiCMOS Technologies without Epitaxially-Buried Subcollectors and Deep Trenches
TL;DR: In this article, the authors describe the architecture of the BiCMOS processes highlighting the modular scheme for the integration of the bipolar modules into a common CMOS platform and present design issues associated with the implanted collector wells and the key set of electrical HBT parameters.
Proceedings ArticleDOI
A 0.13µm SiGe BiCMOS technology featuring f T /f max of 240/330 GHz and gate delays below 3 ps
Holger Rucker,Bernd Heinemann,Wolfgang Winkler,R. Barth,J. Borngraber,J. Drews,G. G. Fischer,A. Fox,Thomas Grabolla,U. Haak,D. Knoll,F. Korndorfer,Andreas Mai,Steffen Marschmeyer,Peter Schley,D. Schmidt,J. Schmidt,K. Schulz,Bernd Tillack,D. Wolansky,Yuji Yamamoto +20 more
TL;DR: In this paper, a 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented, which features high-speed HBTs (f T =240 GHz, f max =330 GHz, BV CEO =1.7 V) along with high-voltage high-frequency HBT (fT =50 GHz, F max =130 GHz, BS CEO =3.7V) integrated in a dual-gate, triple-well RF-CMOS process.
Journal ArticleDOI
Miniaturized Millimeter-Wave Radar Sensor for High-Accuracy Applications
Mario Pauli,Benjamin Gottel,Steffen Scherr,Akanksha Bhutani,Serdal Ayhan,Wolfgang Winkler,Thomas Zwick +6 more
TL;DR: In this paper, a millimeter wave (mmw) radar sensor working in the frequency range between 121 and 127 GHz is presented, which can be used for distance measurements with an accuracy in the single-digit micrometer range.