Connor J. McClellan

TL;DR: In this paper, the development of 2D field-effect transistors for use in future VLSI technologies is reviewed, and the key performance indicators for aggressively scaled 2D transistors are discussed.

TL;DR: This study reports the first direct measurement of spatially resolved temperature in functioning 2D monolayer MoS2 transistors and reveals unexpected insight into nonuniformities of the MoS1 transistors which do not cause significant self-heating, suggesting that such semiconductors are less sensitive to inhomogeneity than expected.

TL;DR: The fabrication and device characteristics of exfoliated, few-layer, dual-gated ReS2 field effect transistors (FETs) demonstrate current saturation, voltage gain, and a subthreshold swing of 148 mV/decade.

TL;DR: The temperature-dependent thermal boundary conductance (TBC) of monolayer MoS2 with AlN and SiO2 is reported, using Raman thermometry with laser-induced heating, to signify that such interfaces present a key bottleneck in energy dissipation from 2D devices.

TL;DR: These thermal metamaterials are an example in the emerging field of phononics and could find applications where ultrathin thermal insulation is desired, in thermal energy harvesting, or for routing heat in ultracompact geometries.