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Alexander J. Gabourie
Researcher at Stanford University
Publications - 23
Citations - 612
Alexander J. Gabourie is an academic researcher from Stanford University. The author has contributed to research in topics: Thermal conductivity & Monolayer. The author has an hindex of 8, co-authored 21 publications receiving 367 citations. Previous affiliations of Alexander J. Gabourie include University of Wisconsin-Madison & HRL Laboratories.
Papers
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Journal ArticleDOI
Energy Dissipation in Monolayer MoS2 Electronics.
Eilam Yalon,Connor J. McClellan,Kirby K. H. Smithe,Miguel Muñoz Rojo,Runjie Lily Xu,Saurabh V. Suryavanshi,Alexander J. Gabourie,Christopher M. Neumann,Feng Xiong,Amir Barati Farimani,Eric Pop +10 more
TL;DR: This study reports the first direct measurement of spatially resolved temperature in functioning 2D monolayer MoS2 transistors and reveals unexpected insight into nonuniformities of the MoS1 transistors which do not cause significant self-heating, suggesting that such semiconductors are less sensitive to inhomogeneity than expected.
Journal ArticleDOI
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials
Sam Vaziri,Eilam Yalon,Miguel Muñoz Rojo,Saurabh V. Suryavanshi,Huairuo Zhang,Connor J. McClellan,Connor S. Bailey,Kirby K. H. Smithe,Alexander J. Gabourie,Victoria Chen,Sanchit Deshmukh,Leonid A. Bendersky,Albert V. Davydov,Eric Pop +13 more
TL;DR: These thermal metamaterials are an example in the emerging field of phononics and could find applications where ultrathin thermal insulation is desired, in thermal energy harvesting, or for routing heat in ultracompact geometries.
Journal ArticleDOI
Thermal transport in MoS2 from molecular dynamics using different empirical potentials
Ke Xu,Alexander J. Gabourie,Arsalan Hashemi,Zheyong Fan,Zheyong Fan,Ning Wei,Amir Barati Farimani,Hannu-Pekka Komsa,Arkady V. Krasheninnikov,Arkady V. Krasheninnikov,Eric Pop,Tapio Ala-Nissila,Tapio Ala-Nissila +12 more
TL;DR: In this paper, the reactive empirical bond order (REBO) potential has been used for thermal properties of molybdenum disulfide (MoS2) simulations.
Journal ArticleDOI
Reduction of hysteresis in MoS2 transistors using pulsed voltage measurements
Isha M. Datye,Alexander J. Gabourie,Chris D. English,Kirby K. H. Smithe,Connor J. McClellan,Ning C. Wang,Eric Pop +6 more
TL;DR: In this paper, the authors demonstrate a simple pulsed measurement technique which reduces this hysteretic behavior, enabling more accurate characterization of 2D transistors based on two-dimensional (2D) materials, i.e., a dependence of measured current on voltage sweep direction due to charge trapping.
Journal ArticleDOI
Thermal boundary conductance of two-dimensional MoS2 interfaces
TL;DR: In this paper, the authors performed molecular dynamics simulations to evaluate the thermal boundary conductance (TBC) between one to five layers of MoS2 and amorphous SiO2 as well as between single-layer MoS 2 and crystalline AlN. The results of all calculations are compared to existing experimental data.