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Vincent Mosser

Researcher at Itron

Publications -  50
Citations -  905

Vincent Mosser is an academic researcher from Itron. The author has contributed to research in topics: Hall effect sensor & Hall effect. The author has an hindex of 15, co-authored 50 publications receiving 858 citations.

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Weak antilocalization and spin precession in quantum wells.

TL;DR: Comparison of the experiment and the theory have allowed us to determine what mechanisms dominate the spin-relaxation in quantum wells and to improve the accuracy of determination of spin-splitting parameters in crystals and two-dimensional structures.
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A Spinning Current Circuit for Hall Measurements Down to the Nanotesla Range

TL;DR: The spinning current modulation technique is shown not only to be able to suppress all the offset and low-frequency noise contributions from the Hall sensing element and its preamplifier, but it may also suppress the parasitic signals, such as pickup noise and thermal electromotive force contributed by the interconnects in a hybrid Hall plate/driving electronics system with remote Hall sensor head.
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High sensitivity hall sensors with low thermal drift using AlGaAs/InGaAs/GaAs heterostructures

TL;DR: In this paper, a set of test devices with well-controlled structure parameters were designed in order to investigate and minimize the thermal drift of the Hall sensitivity, and a self-consistent description of the quantum well was used to optimize the structure design.
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Magnetization dynamics in the single-molecule magnet Fe 8 under pulsed microwave irradiation

TL;DR: In this paper, the authors studied the spin dynamics of a single-molecule magnet in the presence of pulsed microwave radiation at GHz and found that the phonon bottleneck with a characteristic relaxation time of $118\phantom{\rule{0.3em}{0ex}}\mathrm{ms} strongly affects the magnetization dynamics.
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A Compact Model and Parameter Extraction Method for a Staggered OFET With Power-Law Contact Resistance and Mobility

TL;DR: A drain current model and a consistent parameter extraction method for organic field effect transistors (OFETs) considering the gate voltage-dependent contact resistance and mobility by power-law are presented in this paper.