While organic electronics is mostly dominated by light-emitting diodes, photovoltaic cells and transistors, optoelectronics properties peculiar to organic semiconductors make them interesting candidates for the development of innovative and disruptive applications also in the field of light signal detection. In fact, organic-based photoactive media combine effective light absorption in the region of the spectrum from ultraviolet to near-infrared with good photogeneration yield and low-temperature processability over large areas and on virtually every substrate, which might enable innovative optoelectronic systems to be targeted for instance in the field of imaging, optical communications or biomedical sensing. In this review, after a brief resume of photogeneration basics and of devices operation mechanisms, we offer a broad overview of recent progress in the field, focusing on photodiodes and phototransistors. As to the former device category, very interesting values for figures of merit such as photoconversion efficiency, speed and minimum detectable signal level have been attained, and even though the simultaneous optimization of all these relevant parameters is demonstrated in a limited number of papers, real applications are within reach for this technology, as it is testified by the increasing number of realizations going beyond the single-device level and tackling more complex optoelectronic systems. As to phototransistors, a more recent subject of study in the framework of organic electronics, despite a broad distribution in the reported performances, best photoresponsivities outperform amorphous silicon-based devices. This suggests that organic phototransistors have a large potential to be used in a variety of optoelectronic peculiar applications, such as a photo-sensor, opto-isolator, image sensor, optically controlled phase shifter, and opto-electronic switch and memory.

Organic light detectors: photodiodes and phototransistors.

With the advent of devices based on single crystals, the performance of organic field-effect transistors has experienced a significant leap, with mobility now in excess of 10 cm2 V−1 s−1. The purpose of this review is to give an overview of the state-of-the-art of these high-performance organic transistors. The paper focuses on the problem of parameter extraction, limitations of the performance by the interfaces, which include the dielectric–semiconductor interface, and the injection and retrieval of charge carriers at the source and drain electrodes. High-performance devices also constitute tools of choice for investigating charge transport phenomena in organic materials. It is shown how the combination of field-effect measurements with other electrical characterizations helps in elucidating this still unresolved issue.

High-Performance Organic Field-Effect Transistors

In this article, we review current understanding of the reliability of organic field-effect transistors, with a particular focus on degradation of device characteristics under bias stress conditions. We discuss the various factors that have been found to influence the operational stability of different material systems, including dependence on stress voltage and duty cycle, gate dielectric, environmental conditions, light exposure, and contact resistance. A key question concerns the role of extrinsic factors, such as oxidation or presence of moisture, and that of intrinsic factors, such as the inherent structural and electronic disorder that is present in thin organic semiconductor films. We also review current understanding of the microscopic defects that could play a role in charge trapping in organic semiconductors.

Reliability of Organic Field‐Effect Transistors

In recent decades, the susceptibility to degradation in both ambient and aqueous environments has prevented organic electronics from gaining rapid traction for sensing applications. Here we report an organic field-effect transistor sensor that overcomes this barrier using a solution-processable isoindigo-based polymer semiconductor. More importantly, these organic field-effect transistor sensors are stable in both freshwater and seawater environments over extended periods of time. The organic field-effect transistor sensors are further capable of selectively sensing heavy-metal ions in seawater. This discovery has potential for inexpensive, ink-jet printed, and large-scale environmental monitoring devices that can be deployed in areas once thought of as beyond the scope of organic materials.

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Highly stable organic polymer field-effect transistor sensor for selective detection in the marine environment

Research into organic field effect transistors (OFETs) has made significant advances—both scientifically and technologically—during the last decade, and the first products will soon enter the market. Printed electronic circuits using organic resistors, diodes and transistors may become cheap alternatives to silicon-based systems, especially in large-area applications. A key parameter for device operation, besides long term stability, is the reproducibility of the current–voltage behavior, which may be affected by hysteresis phenomena. Hysteresis effects are often observed in organic transistors during sweeps of the gate voltage (V
 GS). This hysteresis can originate in various ways, but comparative scientific investigations are rare and a comprehensive picture of “hysteresis phenomena” in OFETs is still missing. This review provides an overview of the physical effects that cause hysteresis and discusses the importance of such effects in OFETs in a comparative manner.

Current versus gate voltage hysteresis in organic field effect transistors

We have investigated hysteresis in pentacene-based field-effect transistors with SiO2 as gate dielectric. A clear hysteresis behavior in transfer and output characteristics is reported. Measurements show that the observed hysteresis is due to hole trapping in the pentacene film. Long time constants of the trapping/detrapping mechanism are demonstrated through transient measurements. An initialization routine to be performed prior to measurements is proposed to enable reproducible and reliable measurements on pentacene transistors.

Hole trap related hysteresis in pentacene field-effect transistors

The authors present a strategy to manufacture wavelength-selective field-effect phototransistors by employing dye-doped poly-3-hexylthiophene (P3HT) as a semiconducting layer. The dye doping of the semiconductor P3HT was achieved by blending organic molecules—coumarin 6, oxazine 1, and nile red—into the conjugated organic polymer. Illuminating these transistors with monochromatic light in the range of 400–700nm resulted in varying conductivities for certain wavelengths in dependence on the particular dye. This effect is attributed to the photogeneration of excitons on the dye molecules, which are subsequently transferred to the conjugated polymer.

Wavelength-selective organic field-effect phototransistors based on dye-doped poly-3-hexylthiophene

Gate insulators and interface effects in organic thin-film transistors

A PSPICE model for organic thin-film transistors (OFETs) employing poly(3-hexylthiophene-2,5-diyl) (P3HT) is derived. This model is based on the standard MOSFET Berkeley Short-channel IGFET Model equations, where the voltage dependences of the charge carrier mobility and the bulk conductivity are modeled by additional voltage-controlled current sources. The model requires only five additional parameters, which can be extracted from the output characteristics of the device. The model equations have been verified by device simulations, and the simulation results have been compared with measurements of P3HT OFETs.

A Physical-Based PSPICE Compact Model for Poly(3-hexylthiophene) Organic Field-Effect Transistors

Physics-based models of organic field-effect transistors (OFETs) which can be used for computer-aided simulation of organic integrated circuits were investigated. For this purpose hybrid OFETs with poly(3-hexylthiophene-2,5-diyl) as the semiconductor were fabricated and characterized. The differential drain-source resistance reveals the need for a unified consideration of a gate-voltage-dependent mobility and of the depletion effect. We avoid neglecting the capacitance of the insulator and the semiconductor which would have otherwise introduced restrictions. The analytic modeling yields a compact static equivalent circuit diagram.

W. Bauhofer

Papers

Hole trap related hysteresis in pentacene field-effect transistors

Wavelength-selective organic field-effect phototransistors based on dye-doped poly-3-hexylthiophene

Gate insulators and interface effects in organic thin-film transistors

A Physical-Based PSPICE Compact Model for Poly(3-hexylthiophene) Organic Field-Effect Transistors

Static model for organic field-effect transistors including both gate-voltage-dependent mobility and depletion effect