W
Wantae Lim
Researcher at Samsung
Publications - 67
Citations - 2102
Wantae Lim is an academic researcher from Samsung. The author has contributed to research in topics: Thin-film transistor & Amorphous solid. The author has an hindex of 25, co-authored 67 publications receiving 2008 citations. Previous affiliations of Wantae Lim include University of Florida.
Papers
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Recent advances in wide bandgap semiconductor biological and gas sensors
Stephen J. Pearton,Fan Ren,Yu-Lin Wang,Byung Hwan Chu,K. H. Chen,Chih-Yang Chang,Wantae Lim,Jenshan Lin,David P. Norton +8 more
TL;DR: There has been significant recent interest in the use of surface-functionalized thin film and nanowire wide bandgap semiconductors, principally GaN, InN, ZnO and SiC, for sensing of gases, heavy metals, UV photons and biological molecules as mentioned in this paper.
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Room temperature deposited indium zinc oxide thin film transistors
Yu-Lin Wang,Fan Ren,Wantae Lim,David P. Norton,Stephen J. Pearton,Ivan I. Kravchenko,J. M. Zavada +6 more
TL;DR: In this article, a depletion mode indium zinc oxide (IZO) channel thin film transistors were fabricated on glass substrates from layers deposited at room temperature using rf magnetron sputtering.
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Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
Sang-Yun Sung,Jun Hyuk Choi,Un Bin Han,Ki Chang Lee,Joon-Hyung Lee,Jeong-Joo Kim,Wantae Lim,Stephen J. Pearton,David P. Norton,Young-Woo Heo +9 more
TL;DR: In this article, the authors investigated the transfer characteristics and the gate-bias stability of amorphous indium-gallium-zinc oxide thin-film transistors when the channel layer was exposed to hydrogen, oxygen, air, or vacuum at room temperature during measurements.
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High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates
Wantae Lim,Jung Hun Jang,Suhyun Kim,David P. Norton,Valentin Craciun,Stephen J. Pearton,Fan Ren,Hongen Shen +7 more
TL;DR: In this paper, high performance amorphous (α−) InGaZnO-based thin film transistors (TFTs) were fabricated on flexible polyethylene terephthalate substrates coated with indium oxide (In2O3) films.
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Room temperature hydrogen detection using Pd-coated GaN nanowires
Wantae Lim,J.S. Wright,Brent P. Gila,Jason L. Johnson,Ant Ural,Travis J. Anderson,Fan Ren,Stephen J. Pearton +7 more
TL;DR: In this article, multiple GaN nanowires were employed as gas sensors for detection of hydrogen at concentrations from 200-1500 ppm in N2 at 300 K. Palladium coating of the wires improved the sensitivity by a factor of up to 11 at low ppm concentrations relative to uncoated controls.