scispace - formally typeset
Y

Ya-Chin King

Researcher at National Tsing Hua University

Publications -  278
Citations -  4420

Ya-Chin King is an academic researcher from National Tsing Hua University. The author has contributed to research in topics: CMOS & Non-volatile memory. The author has an hindex of 32, co-authored 265 publications receiving 3856 citations. Previous affiliations of Ya-Chin King include TSMC & University of California, Berkeley.

Papers
More filters
Journal ArticleDOI

Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/

TL;DR: In this article, the authors describe a novel technique of fabricating germanium nanocrystal quasi-nonvolatile memory device, which consists of a metal-oxide-semiconductor field effect transistor (MOSFET) with Ge charge-traps embedded within the gate dielectric.
Journal ArticleDOI

Electromagnetic Energy Harvesting Circuit With Feedforward and Feedback DC–DC PWM Boost Converter for Vibration Power Generator System

TL;DR: In this article, an integrated vibration power generator and energy harvesting circuit with feedback control is presented. But the system consists of a mini EH generator and a highly efficient EH circuit implemented on a minute printed circuit board and a 0.35mum CMOS integrated chip.
Proceedings ArticleDOI

24.1 A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based AI Edge Processors

TL;DR: This work proposes a serial-input non-weighted product (SINWP) structure to optimize the tradeoff between area, tMAC and EMAC, and a down-scaling weighted current translator and positive-negative current- subtractor (PN-ISUB) for short delay, a small offset and a compact read-path area.
Proceedings ArticleDOI

A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors

TL;DR: Many artificial intelligence (AI) edge devices use nonvolatile memory (NVM) to store the weights for the neural network (trained off-line on an AI server), and require low-energy and fast I/O accesses.
Journal ArticleDOI

CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors

TL;DR: A fully integrated memristive nvCIM structure that integrates a resistive memory array with control and readout circuits using an established 65 nm foundry CMOS process, can offer high energy efficiency and low latency for Boolean logic and multiply-and-accumulation operations.