W
Wei Ruan
Researcher at Tsinghua University
Publications - 42
Citations - 3810
Wei Ruan is an academic researcher from Tsinghua University. The author has contributed to research in topics: Mott insulator & Superconductivity. The author has an hindex of 19, co-authored 34 publications receiving 2884 citations. Previous affiliations of Wei Ruan include Lawrence Berkeley National Laboratory & University of California, Berkeley.
Papers
More filters
Journal ArticleDOI
Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
Miguel M. Ugeda,Aaron J. Bradley,Su-Fei Shi,Felipe H. da Jornada,Yi Zhang,Diana Y. Qiu,Wei Ruan,Sung-Kwan Mo,Zahid Hussain,Zhi-Xun Shen,Feng Wang,Steven G. Louie,Michael F. Crommie +12 more
TL;DR: The renormalized bandgap and large exciton binding observed here will have a profound impact on electronic and optoelectronic device technologies based on single-layer semiconducting TMDs.
Journal ArticleDOI
Characterization of collective ground states in single-layer NbSe 2
Miguel M. Ugeda,Miguel M. Ugeda,Aaron J. Bradley,Yi Zhang,Yi Zhang,Yi Zhang,Seita Onishi,Yi Chen,Wei Ruan,Wei Ruan,Claudia Ojeda-Aristizabal,Claudia Ojeda-Aristizabal,Claudia Ojeda-Aristizabal,Hyejin Ryu,Mark T. Edmonds,Mark T. Edmonds,Hsin-Zon Tsai,Alexander Riss,Alexander Riss,Sung-Kwan Mo,Dung-Hai Lee,Alex Zettl,Alex Zettl,Zahid Hussain,Zhi-Xun Shen,Zhi-Xun Shen,Michael F. Crommie,Michael F. Crommie +27 more
TL;DR: In this paper, it was shown that superconductivity and charge density wave ordering can remain intact in just a single layer of niobium diselenide, even when the material is thinned.
Journal ArticleDOI
Electron interaction-driven insulating ground state in Bi 2 Se 3 topological insulators in the two-dimensional limit
Minhao Liu,Cui-Zu Chang,Cui-Zu Chang,Zuocheng Zhang,Yi Zhang,Wei Ruan,Ke He,Lili Wang,Xi Chen,Jin-Feng Jia,Shou-Cheng Zhang,Shou-Cheng Zhang,Qi-Kun Xue,Qi-Kun Xue,Xucun Ma,Yayu Wang +15 more
TL;DR: In this article, a transport study of ultrathin topological insulators with thickness from one quintuple layer to six quintuple layers grown on sapphire by molecular beam epitaxy is presented.
Journal Article
Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
Aaron J. Bradley,Miguel M. Ugeda,Su-Fei Shi,Felipe H. da Jornada,Yi Zhang,Diana Y. Qiu,Wei Ruan,Sung-Kwan Mo,Zahid Hussain,Zhi-Xun Shen,Feng Wang,Steven G. Louie,Michael F. Crommie +12 more
Journal ArticleDOI
Probing the role of interlayer coupling and coulomb interactions on electronic structure in few-layer MoSe₂ nanostructures.
Aaron J. Bradley,Miguel M. Ugeda,Felipe H. da Jornada,Felipe H. da Jornada,Diana Y. Qiu,Diana Y. Qiu,Wei Ruan,Wei Ruan,Yi Zhang,Yi Zhang,Sebastian Wickenburg,Sebastian Wickenburg,Alexander Riss,Jiong Lu,Jiong Lu,Sung-Kwan Mo,Zahid Hussain,Zhi-Xun Shen,Zhi-Xun Shen,Steven G. Louie,Steven G. Louie,Michael F. Crommie,Michael F. Crommie +22 more
TL;DR: It is found that the electronic (quasiparticle) bandgap, a fundamental parameter for transport and optical phenomena, decreases by nearly one electronvolt when going from one layer to three due to interlayer coupling and screening effects.