W
Wen-Yu Shan
Researcher at Carnegie Mellon University
Publications - 27
Citations - 4148
Wen-Yu Shan is an academic researcher from Carnegie Mellon University. The author has contributed to research in topics: Topological insulator & Surface states. The author has an hindex of 20, co-authored 27 publications receiving 3577 citations. Previous affiliations of Wen-Yu Shan include Guangzhou University & University of Hong Kong.
Papers
More filters
Journal ArticleDOI
Crossover of the three-dimensional topological insulator Bi 2 Se 3 to the two-dimensional limit
Yi Zhang,Ke He,Cui-Zu Chang,Cui-Zu Chang,Can-Li Song,Lili Wang,Xi Chen,Jin-Feng Jia,Zhong Fang,Xi Dai,Wen-Yu Shan,Shun-Qing Shen,Qian Niu,Xiao-Liang Qi,Shou-Cheng Zhang,Xucun Ma,Qi-Kun Xue +16 more
TL;DR: In this article, a study of the topological insulating Bi2Se3 thin films finds that a gap in these gapless surface states opens up in films below a certain thickness, which suggests that in thicker films, gapless states exist on both upper and lower surfaces.
Journal ArticleDOI
Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
TL;DR: In this article, a three-band tight-binding model for describing low-energy physics in monolayers of group-VIB transition metal dichalcogenides is presented.
Journal ArticleDOI
Massive Dirac fermions and spin physics in an ultrathin film of topological insulator
TL;DR: In this article, transport and optical properties of the surface states, which lie in the bulk energy gap of a thin-film topological insulator, have been studied and a topological quantum phase transition where the Chern number of surface bands changes when varying the thickness of the thin film has been shown.
Journal ArticleDOI
Effective continuous model for surface states and thin films of three-dimensional topological insulators
TL;DR: In this paper, Zhang et al. derived two-dimensional (2D) effective continuous models for the surface states and thin films of a 3D topological insulator (3DTI) based on first-principles calculations.
Journal ArticleDOI
Gate-tunable topological valley transport in bilayer graphene
Mengqiao Sui,Guorui Chen,Liguo Ma,Wen-Yu Shan,Dai Tian,Kenji Watanabe,Takashi Taniguchi,Xiaofeng Jin,Wang Yao,Di Xiao,Yuanbo Zhang +10 more
TL;DR: In this paper, the authors used a perpendicular gate electric field to break the inversion symmetry in bilayer graphene, and a giant nonlocal response was observed as a result of the topological transport of the valley pseudospin.