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Gui-Bin Liu

Researcher at Beijing Institute of Technology

Publications -  70
Citations -  10264

Gui-Bin Liu is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Spintronics & Valleytronics. The author has an hindex of 25, co-authored 60 publications receiving 8176 citations. Previous affiliations of Gui-Bin Liu include University of California & Chinese Academy of Sciences.

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Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides.

TL;DR: It is shown that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls ofspin and valley in these 2D materials.
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Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides

TL;DR: In this article, a three-band tight-binding model for describing low-energy physics in monolayers of group-VIB transition metal dichalcogenides is presented.
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Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

TL;DR: In this article, optical studies of WS2 and WSe2 monolayers and multilayers were carried out, and it was shown that second harmonic generation shows a dramatic evenodd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer).
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Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

TL;DR: The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer) and the giant spin-valley coupling which fully suppresses interlayer hopping at valence band edge near K points.
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Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides.

TL;DR: The bulk electronic structures of these new 2D TMD materials as well as the theoretical models developed at different levels are reviewed, along which the understanding of the origins of a variety of properties observed or predicted is sort out.