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Wenqi Xiong
Researcher at Henan Normal University
Publications - 35
Citations - 1258
Wenqi Xiong is an academic researcher from Henan Normal University. The author has contributed to research in topics: Band gap & Monolayer. The author has an hindex of 18, co-authored 35 publications receiving 899 citations.
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Universality of electronic characteristics and photocatalyst applications in the two-dimensional Janus transition metal dichalcogenides
TL;DR: In this article, the authors explore the universality of electronic characteristics and photocatalyst applications of two-dimensional Janus transition metal dichalcogenides and find that the induced dipole moment, vibrational frequency, Rashba parameters, and direct-indirect band transition of monolayer $MXY$ are deeply associated with the atomic radius and electronegativity differences of chalinogen $X and $Y$ elements.
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A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications
TL;DR: In this article, the authors predicted that the GeSe/SnS heterobilayer has a direct band structure with a gap value of about 1.519 eV and typical type-II band alignment.
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Two-dimensional n -InSe/ p -GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance
Congxin Xia,Juan Du,Xiaowei Huang,Wenbo Xiao,Wenqi Xiong,Tianxing Wang,Zhongming Wei,Yu Jia,Jun-jie Shi,Jingbo Li +9 more
TL;DR: In this article, the authors show that 2D van der Waals (vdW) heterojunctions with typical type-II band alignment are the direct-band-gap semiconductor with high optical absorption strength, broad spectrum width, and excellent carrier mobility.
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Effects of strain and electric field on electronic structures and Schottky barrier in graphene and SnS hybrid heterostructures
TL;DR: In this article, the structural stability and electronic properties of monolayer and bilayer graphene with SnS hybrid heterostructures were studied by using the first-principle methods.