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Yuting Peng
Researcher at University of Texas at Arlington
Publications - 29
Citations - 1105
Yuting Peng is an academic researcher from University of Texas at Arlington. The author has contributed to research in topics: Band gap & Doping. The author has an hindex of 16, co-authored 26 publications receiving 839 citations. Previous affiliations of Yuting Peng include Henan Normal University.
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Universality of electronic characteristics and photocatalyst applications in the two-dimensional Janus transition metal dichalcogenides
TL;DR: In this article, the authors explore the universality of electronic characteristics and photocatalyst applications of two-dimensional Janus transition metal dichalcogenides and find that the induced dipole moment, vibrational frequency, Rashba parameters, and direct-indirect band transition of monolayer $MXY$ are deeply associated with the atomic radius and electronegativity differences of chalinogen $X and $Y$ elements.
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Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p–n heterojunctions
Xiaoting Wang,Le Huang,Yuting Peng,Nengjie Huo,Kedi Wu,Congxin Xia,Zhongming Wei,Sefaattin Tongay,Jingbo Li +8 more
TL;DR: In this paper, the authors fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties.
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Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures
TL;DR: In this paper, the electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures were studied by using first-principles methods.
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The characteristics of n- and p-type dopants in SnS2 monolayer nanosheets
TL;DR: Based on density functional theory, the characteristics of n- and p-type impurities are investigated firstly by means of group V and VII atoms substituting sulfur atoms in the SnS2 monolayer nanosheets and show that the formation energy and transition levels depend highly on the atomic size and electronegativity of the impurity atom.
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The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet
TL;DR: Based on density functional theory, the electronic structures, formation energy and transition energy level of a p-type Mg-doped GaN nanosheet were investigated in this paper, where it was shown that the transition energy decreases monotonously with increasing Mg doping concentration.