Journal ArticleDOI
Direct Wide Bandgap 2D GeSe2 Monolayer toward Anisotropic UV Photodetection
Yong Yan,Wenqi Xiong,Shasha Li,Kai Zhao,Xiaoting Wang,Jian Su,Xiaohui Song,Xueping Li,Shuai Zhang,Huai Yang,Xinfeng Liu,Lang Jiang,Tianyou Zhai,Congxin Xia,Jingbo Li,Zhongming Wei +15 more
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This article is published in Advanced Optical Materials.The article was published on 2019-10-01. It has received 58 citations till now. The article focuses on the topics: Monolayer & Photodetection.read more
Citations
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Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications
TL;DR: In this article, the fundamental components of heterojunctions including UV response semiconductors and other materials functionalized with unique effects are discussed, and several applications based on heterojunction/heterostructure UV PDs are discussed.
Journal ArticleDOI
Photodetectors of 2D Materials from Ultraviolet to Terahertz Waves
Qinxi Qiu,Zhiming Huang +1 more
TL;DR: In this paper, the authors reviewed the recent progress on 2D material photodetectors, covering the spectrum from ultraviolet to terahertz waves, and proposed defect engineering, p-n junctions and hybrid detectors.
Journal Article
Black Phosphorus Field-effect Transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this paper, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
Journal ArticleDOI
Solution-processed one-dimensional CsCu2I3 nanowires for polarization-sensitive and flexible ultraviolet photodetectors
Ying Li,Zhifeng Shi,Lintao Wang,Yancheng Chen,Wenqing Liang,Di Wu,Xinjian Li,Yu Zhang,Chongxin Shan,Xiaosheng Fang +9 more
TL;DR: In this article, one-dimensional CsCu2I3 nanowires (NWs) were used as the light absorber to fabricate a polarization-sensitive UV photodetector.
Journal ArticleDOI
In Situ Fabrication of PdSe2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio.
Di Wu,Mengmeng Xu,Longhui Zeng,Zhifeng Shi,Yongtao Tian,Xin Jian Li,Chongxin Shan,Jiansheng Jie +7 more
TL;DR: In this article , a PdSe2/GaN Schottky junction was developed by in situ van der Waals growth for highly polarization-sensitive UV photodetection.
References
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Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov,Andre K. Geim,Sergey V. Morozov,Da Jiang,Y. Zhang,S. V. Dubonos,Irina V. Grigorieva,A. A. Firsov +7 more
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A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu
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Semiempirical GGA-type density functional constructed with a long-range dispersion correction.
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Effect of the damping function in dispersion corrected density functional theory
TL;DR: It is shown by an extensive benchmark on molecular energy data that the mathematical form of the damping function in DFT‐D methods has only a minor impact on the quality of the results and BJ‐damping seems to provide a physically correct short‐range behavior of correlation/dispersion even with unmodified standard functionals.
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Hybrid functionals based on a screened Coulomb potential
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