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Wilhelm Warta
Researcher at Fraunhofer Society
Publications - 258
Citations - 21740
Wilhelm Warta is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Silicon & Carrier lifetime. The author has an hindex of 58, co-authored 258 publications receiving 20808 citations. Previous affiliations of Wilhelm Warta include University of Freiburg & University of Stuttgart.
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Proceedings ArticleDOI
Spectral Influences on Measurement Uncertainty of a-Si/μc-Si Multi-Junction Solar Devices
Journal ArticleDOI
Experimental Proof of the Slow Light-Induced Degradation Component in Compensated n-Type Silicon
Tim Niewelt,Jonas Schön,Juliane Broisch,Stefan Rein,Jonas Haunschild,Wilhelm Warta,Martin C. Schubert +6 more
TL;DR: In this article, a parameterization of the injection dependent recombination activity of the slower formed defect component is established and the formation kinetics of both defect components are studied and modeled under different conditions, showing that the same rate factors as in p-type can describe the degradation, if the actual hole concentration under illumination is taken into account.
Journal ArticleDOI
A European proficiency test on thin-film tandem photovoltaic devices
Elena Salis,Andreas Gerber,Jens Wenzel Andreasen,Suren A. Gevorgyan,Thomas R. Betts,Blagovest V. Mihaylov,Ralph Gottschalg,Alp Osman Kodolbas,Okan Yilmaz,R. Leidl,Marcus Rennhofer,S. Zamini,Maurizio Acciarri,Simona Binetti,Erwin Lotter,Klaas Bakker,Jan M. Kroon,Wim J. J. Soppe,Guillaume Razongles,Lucia V. Mercaldo,Francesco Roca,Antonio Romano,Jochen Hohl-Ebinger,Wilhelm Warta,Jose L. Balenzategui,J.F. Trigo,Sebastian Neubert,Diego Pavanello,Harald Müllejans,Iver Lauermann +29 more
Proceedings ArticleDOI
Impact of sinx:h and al2o3 surface passivation on interstitial iron concentration and carrier lifetime in mc-silicon wafers
TL;DR: In this article, the influence of surface passivation methods on the bulk properties of SiNx:H and Al2O3 passivation layers was investigated and the authors investigated changes in the carrier lifetime due to applied temperature and additionally hydrogen-passivation.
A European thin-film tandem device proficiency test - Practical outcomes and preliminary results
Iver Lauermann,Elena Salis,Andreas Gerber,J.E. Andreasen,S.A. Gevorgyan,Thomas R. Betts,M. Blagovest,Ralph Gottschalg,A.O. Kodolbas,O. Yilmaz,R. Liedl,M. Rennhofer,S. Zamini,M. Acciarri,S. Binetti,E. Lotter,K. Bakker,Jan M. Kroon,W. Soppe,G. Razongles,L.V. Mercaldo,F. Roca,Antonio Romano,J.H. Ebinger,Wilhelm Warta,J.L. Balenzategui,J.F. Trigo,S. Neubert,Rutger Schlatmann,Diego Pavanello,Harald Müllejans +30 more
TL;DR: Within the European FP7 project CHEETAH, a thin-film tandem solar cell round-robin proficiency test was conducted between 13 testing laboratories, plus the European Solar Test Installation of the European Commission's Joint Research Centre as reference laboratory, to compare testing facilities and procedures against the reference measurement by ESTI.