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Wilhelm Warta

Researcher at Fraunhofer Society

Publications -  258
Citations -  21740

Wilhelm Warta is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Silicon & Carrier lifetime. The author has an hindex of 58, co-authored 258 publications receiving 20808 citations. Previous affiliations of Wilhelm Warta include University of Freiburg & University of Stuttgart.

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Journal ArticleDOI

Quantitative Iron Concentration Imaging

TL;DR: In this paper, the influence of hydrogen passivation induced by silicon nitride passivation is estimated by comparison of silicon oxide and aluminum oxide passivation, and the second part of this work deals with systematic errors inherent to the iron concentration technique.
Proceedings ArticleDOI

Redistribution of Recombination Active Defects and Trapping Effects in Multicrystalline Silicon After Wet Thermal Oxidation

TL;DR: In this paper, the effect of a wet thermal oxidation step at 800 degC with fast temperature ramps on the effective lifetimes measured by the CDI and QSSPC methods was investigated.
Proceedings ArticleDOI

Determining the junction temperature for stc measurements of thin film solar cells

TL;DR: In this paper, the VOC-method was used to predict the spatial and temporal distributions of changes in the temperature of an encapsulated thin film layer, which is confirmed by experiments with specially prepared organic solar cells that also contained a temperature sensor.
Proceedings ArticleDOI

What photons tell us about solar cells – imaging diagnostic techniques

TL;DR: In this paper, the authors demonstrate that band-to-band luminance, heat radiation, dislocation luminescence, and junction-breakdown-related radiation can be used to measure and detect local series resistances, hot-spots, defect-induced junction breakdown, and bulk-, surface-and grain-boundary recombination in silicon solar cells.
Proceedings ArticleDOI

Comparison of spatially resolved carrier lifetimes in mc-Si with solar cell and material characteristics

TL;DR: In this paper, the authors introduced a novel application of modulated free carrier absorption (MFCA) for measuring minority carrier lifetimes in multicrystalline silicon with high spatial resolution.