Wilhelm Warta

TL;DR: In this paper, the effect due to absorption and emission of infrared radiation by excess carriers in silicon wafers is analyzed and a lifetime measurement technique based on the latter effect is described.

TL;DR: Greeny, Keith Emery, David L. King, Sanekazu Igari and Wilhelm Warta Centre for Photovoltaic Engineering, University of New South Wales, Sydney 2052, Australia National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401, USA Sandia National Laboratories, 1515 Eubank Blvd. SE, Albuquerque, NM 87123-0752, USA Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Tsukuba, Ibaraki, Japan Department of Solar Cells-Materials and

TL;DR: In this article, the authors simulate the precipitation of iron during the multicrystalline ingot crystallization process and the redistribution of the iron during subsequent phosphorus diffusion gettering with a 2D model.

TL;DR: In this article, the authors present a comprehensive overview over infrared imaging techniques for (electrical) silicon solar cell characterization and present an ultra-fast, simple and quantitative method for hot-spot detection.

TL;DR: In this article, the microscopic electric properties of single spikes are presented, i.e. alterations of the local emitter doping density, the pronounced local recombination activity at the interface between spikes and Si and its influence on the charge collection efficiency, are used to explain the observed dependencies of global cell parameters on the Al content of contact pastes.