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Wolfgang Benecke

Researcher at Fraunhofer Society

Publications -  113
Citations -  3987

Wolfgang Benecke is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Silicon & Surface micromachining. The author has an hindex of 30, co-authored 110 publications receiving 3782 citations. Previous affiliations of Wolfgang Benecke include University of Kiel & University of Bremen.

Papers
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Journal ArticleDOI

Direct Growth of Freestanding ZnO Tetrapod Networks for Multifunctional Applications in Photocatalysis, UV Photodetection, and Gas Sensing

TL;DR: This work demonstrates the versatile and single-step synthesis of ZnO-T with different arm morphologies by a simple flame transport synthesis (FTS) approach, forming a network that will be of interest for various advanced applications.
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Thermally excited silicon microactuators

TL;DR: In this paper, a cantilever-type micromachined silicon actuator based on the bimetal effect used extensively for the fabrication of temperature-controlled electrical switches is described.
Proceedings ArticleDOI

TMAHW etchants for silicon micromachining

TL;DR: In this paper, tetramethyl ammonium hydroxide and water (TMAHW) solutions are proposed for etching monocrystalline silicon and discussed with respect to anisotropy, selectivity, and IC-process compatibility.
Journal ArticleDOI

Single step integration of ZnO nano- and microneedles in Si trenches by novel flame transport approach: whispering gallery modes and photocatalytic properties.

TL;DR: In this paper, a flame transport synthesis approach was used for the integration of ZnO nano-and microneedles into Si trenches by a single fabrication step, which showed good crystalline quality and the presence of whispering gallery mode resonances on the top of needles.
Journal ArticleDOI

A novel surface-micromachined capacitive porous silicon humidity sensor

TL;DR: In this article, the design, fabrication and characterisation of a novel humidity sensor is presented, which consists of a capacitor with a porous silicon dielectric, two thermoresistors and a refresh resistor.