Diamond-like carbon (DLC) is a metastable form of amorphous carbon with significant sp3 bonding. DLC is a semiconductor with a high mechanical hardness, chemical inertness, and optical transparency. This review will describe the deposition methods, deposition mechanisms, characterisation methods, electronic structure, gap states, defects, doping, luminescence, field emission, mechanical properties and some applications of DLCs. The films have widespread applications as protective coatings in areas, such as magnetic storage disks, optical windows and micro-electromechanical devices (MEMs).

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Diamond-like amorphous carbon

Electrical current can be completely spin polarized in a class of materials known as half-metals, as a result of the coexistence of metallic nature for electrons with one spin orientation and insulating nature for electrons with the other. Such asymmetric electronic states for the different spins have been predicted for some ferromagnetic metals--for example, the Heusler compounds--and were first observed in a manganese perovskite. In view of the potential for use of this property in realizing spin-based electronics, substantial efforts have been made to search for half-metallic materials. However, organic materials have hardly been investigated in this context even though carbon-based nanostructures hold significant promise for future electronic devices. Here we predict half-metallicity in nanometre-scale graphene ribbons by using first-principles calculations. We show that this phenomenon is realizable if in-plane homogeneous electric fields are applied across the zigzag-shaped edges of the graphene nanoribbons, and that their magnetic properties can be controlled by the external electric fields. The results are not only of scientific interest in the interplay between electric fields and electronic spin degree of freedom in solids but may also open a new path to explore spintronics at the nanometre scale, based on graphene.

https://arxiv.org/pdf/cond-mat/0611600.pdf

Half-metallic graphene nanoribbons

The last decade witnessed significant progress in angle-resolved photoemission spectroscopy (ARPES) and its applications. Today, ARPES experiments with 2-meV energy resolution and $0.2\ifmmode^\circ\else\textdegree\fi{}$ angular resolution are a reality even for photoemission on solids. These technological advances and the improved sample quality have enabled ARPES to emerge as a leading tool in the investigation of the high-${T}_{c}$ superconductors. This paper reviews the most recent ARPES results on the cuprate superconductors and their insulating parent and sister compounds, with the purpose of providing an updated summary of the extensive literature. The low-energy excitations are discussed with emphasis on some of the most relevant issues, such as the Fermi surface and remnant Fermi surface, the superconducting gap, the pseudogap and $d$-wave-like dispersion, evidence of electronic inhomogeneity and nanoscale phase separation, the emergence of coherent quasiparticles through the superconducting transition, and many-body effects in the one-particle spectral function due to the interaction of the charge with magnetic and/or lattice degrees of freedom. Given the dynamic nature of the field, we chose to focus mainly on reviewing the experimental data, as on the experimental side a general consensus has been reached, whereas interpretations and related theoretical models can vary significantly. The first part of the paper introduces photoemission spectroscopy in the context of strongly interacting systems, along with an update on the state-of-the-art instrumentation. The second part provides an overview of the scientific issues relevant to the investigation of the low-energy electronic structure by ARPES. The rest of the paper is devoted to the experimental results from the cuprates, and the discussion is organized along conceptual lines: normal-state electronic structure, interlayer interaction, superconducting gap, coherent superconducting peak, pseudogap, electron self-energy, and collective modes. Within each topic, ARPES data from the various copper oxides are presented.

https://arxiv.org/pdf/cond-mat/0208504.pdf

Angle-resolved photoemission studies of the cuprate superconductors

Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memory and could lead to novel forms of computing. However, progress has been delayed by difficulties in understanding and controlling the coupled electronic and ionic phenomena that dominate the behaviour of nanoscale oxide devices. An analytic theory of the ‘memristor’ (memory-resistor) was first developed from fundamental symmetry arguments in 1971, and we recently showed that memristor behaviour can naturally explain such coupled electron–ion dynamics. Here we provide experimental evidence to support this general model of memristive electrical switching in oxide systems. We have built micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching. We demonstrate that switching involves changes to the electronic barrier at the Pt/TiO2 interface due to the drift of positively charged oxygen vacancies under an applied electric field. Vacancy drift towards the interface creates conducting channels that shunt, or short-circuit, the electronic barrier to switch ON. The drift of vacancies away from the interface annilihilates such channels, recovering the electronic barrier to switch OFF. Using this model we have built TiO2 crosspoints with engineered oxygen vacancy profiles that predictively control the switching polarity and conductance. Nanoscale metal/oxide/metal devices that are capable of fast non-volatile switching have been built from platinum and titanium dioxide. The devices could have applications in ultrahigh density memory cells and novel forms of computing.

Memristive switching mechanism for metal/oxide/metal nanodevices.

A large amount of work world-wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si. Much progress has been made following the demonstration in 1990 that highly porous material could emit very efficient visible photoluminescence at room temperature. Since that time, all features of the structural, optical and electronic properties of the material have been subjected to in-depth scrutiny. It is the purpose of the present review to survey the work which has been carried out and to detail the level of understanding which has been attained. The key importance of crystalline Si nanostructures in determining the behaviour of porous Si is highlighted. The fabrication of solid-state electroluminescent devices is a prominent goal of many studies and the impressive progress in this area is described.

The structural and luminescence properties of porous silicon

Dichroism and spin information in soft X-ray emission

The magnetism of epitaxial fcc Fe films deposited on Co(100) and sandwiched between two Co(100) films was investigated by x-ray magnetic circular dichroism. The dependence of the Fe magnetism on the film thickness is complex and qualitatively similar on Co(100) and in fcc Co/Fe/Co(100) trilayers. The fcc Fe film magnetization presents a pronounced oscillation, suggesting a partial antiferromagnetic ordering in the 5\char21{}10 monolayer thickness range. The fcc Fe films mediate an oscillatory, indirect coupling in Co/Fe/Co(100) structures that alternates in correspondence with the changes of the Fe magnetization.

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Magnetism and interlayer coupling in fcc Fe/Co films

The electronic structure of porous Si is investigated using soft–X-ray fluorescence spectroscopy Significant changes are observed as compared to bulk Si, which we interpret as due to altered electronic structure in the Si nanostructures By imposing standing wave boundary conditions on the valence band wave functions, we calculate the fluorescence spectrum for thin Si sheets of different orientations For a (100)-oriented sheet, the calculation is in good agreement with the experimental spectra, suggesting that the nanostructure in porous Si is predominantly in the form of thin Si (100)-type sheets

Soft–X-ray fluorescence of porous silicon: electronic structure of Si nanostructures

Resonant photoemission studies of the decay of the C 1s core hole excited states in a solid film of C60 (fullerite) reveal the nature of the dynamic screening processes in this new solid phase of carbon and give evidence that the HOMO and LUMO states are extended throughout the solid.

http://iopscience.iop.org/article/10.1209/0295-5075/16/5/005/pdf

Experimental determination of the electronic structure of solid C60 ; evidence for extended solidlike electronic states

The electronic structure of the Cu(111) surface changes upon adsorption of CO or ${\mathrm{N}}_{2}$. Comparing the results for both adsorbates, we are able to differentiate between changes in the electronic structure induced by a change in the potential at the surface or by a chemical bond. The ${\ensuremath{\Lambda}}_{1}$ surface state is involved in the chemical bond of CO. On the other hand, a surface resonance at the top of the $d$ bands and an adsorbate-induced surface state at the bottom of the $d$ bands are caused by changes in the potential.

Wolfgang Eberhardt

Papers

Dichroism and spin information in soft X-ray emission

Magnetism and interlayer coupling in fcc Fe/Co films

Soft–X-ray fluorescence of porous silicon: electronic structure of Si nanostructures

Experimental determination of the electronic structure of solid C60 ; evidence for extended solidlike electronic states

Interaction of CO and N 2 with the Cu(111) surface