W
Wolfram Wersing
Researcher at Siemens
Publications - 146
Citations - 3178
Wolfram Wersing is an academic researcher from Siemens. The author has contributed to research in topics: Ceramic & Thin film. The author has an hindex of 28, co-authored 146 publications receiving 3093 citations.
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Patent
Device and method for detecting a substance
TL;DR: In this article, a mass sensor with a piezo-acoustic high-frequency thin film resonator is described, and the thickness of the pioelectric layer is in the region of 0.5 to 20 μm.
Journal ArticleDOI
Dielectric, elastic and piezoelectric properties of porous PZT ceramics
TL;DR: In this article, the porosity of porosity in the order of 0.4 to 0.5 was investigated with a view to their application for ultrasound transducers, and it was found that the dielectric and elastic constants of porous porosity can be satisfactorily described on the basis of Bruggeman's theory.
Proceedings ArticleDOI
Novel integrated FBAR sensors: a universal technology platform for bio- and gas-detection
Reinhard Gabl,E. Green,Matthias Schreiter,Hans-Dieter Feucht,Heinz Zeininger,Robert Primig,Dana Pitzer,Gerald Dr. Eckstein,Wolfram Wersing +8 more
TL;DR: In this article, the feasibility of thin film bulk acoustic resonators (FBAR) for applications in bio- and gas-detection, is shown for the first time. Solidly mounted, ZnO FBARs with frequencies around 2 GHz have been fabricated on silicon substrates.
Journal ArticleDOI
Sensing characteristics of high-frequency shear mode resonators in glycerol solutions
Mathias Link,Mathias Link,Jan Weber,Matthias Schreiter,Wolfram Wersing,Omar Elmazria,Patrick Alnot +6 more
TL;DR: In this paper, a film bulk acoustic resonators (FBAR) was fabricated for gravimetric sensing applications in liquid environments and the FBARs can be used as high frequency viscosity sensors for liquids of viscosities up to 10mPa.
Journal ArticleDOI
Electro-acoustic hysteresis behaviour of PZT thin film bulk acoustic resonators
TL;DR: In this article, a planar multi-target sputtering system using thin film bulk acoustic resonators (FBARs) based on Pb(Zr x Ti (1− x )O 3 (PZT) with varying compositions, ranging from x = 0.25 to 0.6, were fabricated to investigate hysteresis-like dependencies of the resonance frequency and electro-mechanical coupling constant on bias voltage.