http://www.heavythinking.org/cp-blog/wp-content/uploads/2011/03/Flemming-et-al-1999-Effects-of-synthetic-micro-and-nano-structured-surfaces-on-cell-behaviour.pdf

Effects of synthetic micro- and nano-structured surfaces on cell behavior

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

2.2. Interface Trapping Effects 211 3. High-k Dielectric Materials for OFETs 212 3.1. Inorganic Dielectrics 212 3.1.1. Aluminum Oxide 213 3.1.2. Tantalum Oxide 215 3.1.3. Titanium Dioxide 216 3.1.4. Hafnium Dioxide 217 3.1.5. Zirconium Dioxide 218 3.1.6. Cerium Dioxide 218 3.2. Organic Dielectrics 218 3.2.1. Polymer Dielectrics 218 3.2.2. Self-Assembled Monoand Multilayers 225 3.3. Hybrid Dielectrics 227 3.3.1. Polymeric-Nanoparticle Composites 227 3.3.2. Inorganic-Organic Bilayers 232 3.3.3. Hybrid Solid Polymer Electrolytes 235 4. Summary 235 5. Acknowledgments 236 6. References 236

High-k organic, inorganic, and hybrid dielectrics for low-voltage organic field-effect transistors.

The outstanding properties of SiO2, which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO2 interface, which forms the heart of the modern metal–oxide–semiconductor field effect transistor, the building block of the integrated circuit, is arguably the worlds most economically and technologically important materials interface. This article summarizes recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si–O–N (silicon oxynitride) gate dielectrics on Si based devices. We will emphasize an understanding of the limits of these gate dielectrics, i.e., how their continuously shrinking thickness, dictated by integrated circuit device scaling, results in physical and electrical property changes that impose limits on their usefulness. We observe, in conclusion, that although Si microelectronic devices...

Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

Journal of Applied physics,Vol.33 : 1962年に発表されたレオロジー関連の論文

Background and objectiveSeveral criteria for treatment response to interferon beta (IFNβ) have been proposed, although there is no consensus among different investigators. Hence, the aim of this study was to investigate magnetic resonance imaging (MRI) and clinical predictors of response during the first 12 months of therapy.MethodsThis is a prospective and longitudinal study of relapsing-remitting multiple sclerosis (RRMS) patients treated with IFNβ. Patients were classified based on the presence of new lesions on MRI, relapses, confirmed disability increase, or combinations of all these variables after 1 year of therapy. Regression analysis was performed in order to identify variables of response after a follow-up of 3 years.ResultsWe included 222 RRMS patients. The logistic model demonstrated that only the combination of new active lesions on MRI with the presence of relapses (OR 4.4; 95% CI 1.6–12.5) or disability progression (Odds Ratio (OR) 7.1; 95% Confidence Interval (CI) 1.6–33.9), or both (OR 6....

Measures in the first year of therapy predict the response to interferon beta in MS.

Overcoming challenges associated with implementation of resistive random access memory technology for non-volatile information storage requires identifying the material characteristics responsible for resistive switching. In order to connect the switching phenomenon to the nano-scale morphological features of the dielectrics employed in memory cells, we applied the enhanced conductive atomic force microscopy technique for in situ analysis of the simultaneously collected electrical and topographical data on HfO2 stacks of various degrees of crystallinity. We demonstrate that the resistive switching is a local phenomenon associated with the formation of a conductive filament with a sufficiently small cross-section, which is determined by the maximum passing current. Switchable filament is found to be formed at the dielectric sites where the forming voltages were sufficiently small, which, in the case of the stoichiometric HfO2, is observed exclusively at the grain boundary regions representing low resistant...

/pdf/resistive-switching-in-hafnium-dioxide-layers-local-1w9xze4ova.pdf

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

PURPOSE: To evaluate the accuracy of echo-planar T2*-weighted magnetic resonance (MR) sequences in detection of acute middle cerebral artery (MCA) or internal carotid artery (ICA) thrombotic occlusion. MATERIALS AND METHODS: Forty-two consecutive patients with stroke involving the MCA territory underwent MR imaging within 6 hours after clinical onset. MR examination included echo-planar T2*-weighted, diffusion-weighted (DW), and perfusion-weighted (PW) imaging and MR angiography. Presence or absence of the susceptibility sign on echo-planar T2*-weighted images, which is indicative of acute thrombotic occlusion involving MCA or ICA, was assessed in consensus by two observers blinded to clinical information and other MR imaging data. Differences in lesion volume on DW and PW images between patients with and those without the susceptibility sign were evaluated with the Mann-Whitney test. P < .05 was considered to indicate a significant difference. RESULTS: Thirty patients (71%) had a positive susceptibility ...

Hyperacute Ischemic Stroke: Middle Cerebral Artery Susceptibility Sign at Echo-planar Gradient-Echo MR Imaging

A conductive atomic force microscope (C-AFM) has been used to investigate the degradation and breakdown of ultrathin (<6 nm) films of SiO2 at a nanometric scale. Working on bare gate oxides, the conductive tip of the C-AFM allows the electrical characterization of nanometric areas. Due to the extremely small size of the analyzed areas, several features, which are not registered during macroscopic tests, are observed. In particular, before the oxide breakdown, switchings between different conduction states and sudden changes of conductivity have been measured, which have been related to the prebreakdown noise observed in conventional metal–oxide–semiconductor structures. Moreover, similar switchings have been also measured after the oxide breakdown, which have been related to the opening or closure of conduction channels between the electrodes. The C-AFM has also allowed the determination of the areas in which the degradation and breakdown take place. The results have shown that, although degradation takes...

Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope

Prior to any attempt to model a charge transport mechanism, a precise knowledge of the parameters on which the current depends is essential. In this work, the soft breakdown (SBD) failure mode of ultrathin (3-5 nm) SiO/sub 2/ layers in polysilicon-oxide-semiconductor structures is investigated. This conduction regime is characterized by a large leakage current and by multilevel current fluctuations, both at low applied voltages. In order to obtain a general picture of SBD, room-temperature current-voltage (I-V) measurements have been performed on samples with different gate areas, oxide thicknesses and substrate types. An astounding matching between some of these I-V characteristics has been found. The obtained results and the comparison with the final breakdown regime suggest that the current flow through a SBD spot is largely influenced by its atomic-scale dimensions as occurs in a point contact configuration. Experimental data are also presented which demonstrate that specific current fluctuations can be ascribed to a blocking behavior of unstable SBD conduction channels.

Xavier Aymerich

Papers

Measures in the first year of therapy predict the response to interferon beta in MS.

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

Hyperacute Ischemic Stroke: Middle Cerebral Artery Susceptibility Sign at Echo-planar Gradient-Echo MR Imaging

Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope

Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics