There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Leu-M

Advanced energy conversion and storage (ECS) devices (including fuel cells, photoelectrochemical water splitting cells, solar cells, Li-ion batteries and supercapacitors) are expected to play a major role in the development of sustainable technologies that alleviate the energy and environmental challenges we are currently facing. The successful utilization of ECS devices depends critically on synthesizing new nanomaterials with merits of low cost, high efficiency, and outstanding properties. Recent progress has demonstrated that nanostructured metal chalcogenides (MCs) are very promising candidates for efficient ECS systems based on their unique physical and chemical properties, such as conductivity, mechanical and thermal stability and cyclability. In this review, we aim to provide a summary on the liquid-phase synthesis, modifications, and energy-related applications of nanostructured metal chalcogenide (MC) materials. The liquid-phase syntheses of various MC nanomaterials are primarily categorized with the preparation method (mainly 15 kinds of methods). To obtain optimized, enhanced or even new properties, the nanostructured MC materials can be modified by other functional nanomaterials such as carbon-based materials, noble metals, metal oxides, or MCs themselves. Thus, this review will then be focused on the recent strategies used to realize the modifications of MC nanomaterials. After that, the ECS applications of the MC/modified-MC nanomaterials have been systematically summarized based on a great number of successful cases. Moreover, remarks on the challenges and perspectives for future MC research are proposed (403 references).

Nanostructured metal chalcogenides: synthesis, modification, and applications in energy conversion and storage devices

A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ∼1 nm, the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interface...

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Nanoscale thermal transport. II. 2003–2012

Semiconductor nanowires represent an important class of nanostructure building block for photovoltaics as well as direct solar-to-fuel application because of their high surface area, tunable bandgap and efficient charge transport and collection. In this talk, I will highlight several recent examples in this lab using semiconductor nanowires and their heterostructures for the purpose of solar energy harvesting. In addition, we have also discovered that the thermoconductivity of the silicon nanowires can be significantly reduced due to phonon scattering, pointing to a very promising approach to design better thermoelectrical materials. It is important to note that the engines that generate most of the world's power typically operate at only 30–40 per cent efficiency, releasing roughly 15 terawatts of heat to the environment. If this “wasted heat” could be recycled, the impact globally would be enormous. Our silicon nanowire thermoelectric technology could have a significant impact in alternative energy generation.

Semiconductor nanowires for energy conversion.

The rapid development of neuro-inspired computing demands synaptic devices with ultrafast speed, low power consumption, and multiple non-volatile states, among other features. Here, a high-performance synaptic device is designed and established based on a Ag/PbZr0.52Ti0.48O3 (PZT, (111)-oriented)/Nb:SrTiO3 ferroelectric tunnel junction (FTJ). The advantages of (111)-oriented PZT (~1.2 nm) include its multiple ferroelectric switching dynamics, ultrafine ferroelectric domains, and small coercive voltage. The FTJ shows high-precision (256 states, 8 bits), reproducible (cycle-to-cycle variation, ~2.06%), linear (nonlinearity <1) and symmetric weight updates, with a good endurance of >109 cycles and an ultralow write energy consumption. In particular, manipulations among 150 states are realized under subnanosecond (~630 ps) pulse voltages ≤5 V, and the fastest resistance switching at 300 ps for the FTJs is achieved by voltages <13 V. Based on the experimental performance, the convolutional neural network simulation achieves a high online learning accuracy of ~94.7% for recognizing fashion product images, close to the calculated result of ~95.6% by floating-point-based convolutional neural network software. Interestingly, the FTJ-based neural network is very robust to input image noise, showing potential for practical applications. This work represents an important improvement in FTJs towards building neuro-inspired computing systems. 

/pdf/high-precision-and-linear-weight-updates-by-subnanosecond-r96q16vt.pdf

High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing

/pdf/high-precision-and-linear-weight-updates-by-subnanosecond-1w0dt1gr.pdf

A High-Speed and Low-Power Multistate Memory Based on Multiferroic Tunnel Junctions

The non-volatile resistance states induced by converse piezoelectric effect are observed in ferromagnetic/ferroelectric epitaxial heterostructures of (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 (LSMO/PMN0.7PT0.3). Three stable remnant strain states and the corresponding resistance states are achieved by properly reversing the electric field from the depolarized direction in ferroelectric PMN0.7PT0.3 substrate. The non-volatile resistance states of the LSMO film can be manipulated by applied electric-field pulse sequence as a result of the large coupling between the electronic states of LSMO film and the strain transferred from the ferroelectric substrate. The electrically tunable, non-volatile resistance states observed exhibit potential for applications in low-power-consumption electronic devices.

https://www.brown.edu/research/labs/xiao/sites/brown.edu.research.labs.xiao/files/uploads/Piezo-strain%20induced%20non-volatile%20resistance%20states%20in%20(011)-La2,3Sr1,3MnO3,0.7Pb(Mg2,3Nb1,3)O3-0.3PbTiO3%20epitaxial%20heterostructures.pdf

Piezo-strain induced non-volatile resistance states in (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 epitaxial heterostructures

In this study, chromium carbide (Cr 3 C 2 ) was selected as the sintering additive for the densification of boron carbide (B 4 C). Cr 3 C 2 can react with B 4 C and form graphite and CrB 2 in situ, which is considered to be effective for the sintering of B 4 C composites. The sintering behavior, microstructure development and mechanical properties of B 4 C composites were studied. The density of B 4 C composite increased with the increase of Cr 3 C 2 content and sintering temperature. The formation of liquid phase could effectively improve the densification of B 4 C composites. The abnormal grains began to appear at 2080 °C. The bending strength could reach 440 MPa for the 25 wt% and 30 wt% Cr 3 C 2 samples after sintering at 2070 °C.

Xiaoguang Li

Papers

High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing

High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing

A High-Speed and Low-Power Multistate Memory Based on Multiferroic Tunnel Junctions

Piezo-strain induced non-volatile resistance states in (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 epitaxial heterostructures

Pressureless sintering of boron carbide with Cr3C2 as sintering additive