Showing papers by "Xinbo Yang published in 2018"

A Universal Double‐Side Passivation for High Open‐Circuit Voltage in Perovskite Solar Cells: Role of Carbonyl Groups in Poly(methyl methacrylate)

Abstract: This work was supported by the Australian Government through the Australian Renewable Energy Agency (ARENA) and the Australian Research Council. Responsibility for the views, information or advice expressed herein is not accepted by the Australian Government. J.P. acknowledges the funding support from Australian Nanotechnology Network (ANN) and Department of Innovation, Industry, Science and Research (DIISR). The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). The authors thank Xavier Pita, scientific illustrator at King Abdullah University of Science and Technology (KAUST), for producing Figure 1a in this paper. J.P. conceived the idea, designed the overall experiments, and led the project. J.P., T.D., H.S., and Y.W. prepared and characterized the perovskite cell devices. J.I.K. and E.U. performed the TA and TRPL measurements and data analysis. F.L. supervised the TA and TRPL measurements and analysis. W.L., X.Y., and J. P. conducted the FTIR measurements and analysis. W.L. performed the DFT calculation. T.D., H.S., and Y.W. conducted the PL imaging measurements. H.D. conducted the XRD and SEM measurements. K.W. conducted the NMR measurements and analysis. E.A. conducted the EQE measurements. J.P., J.I.K., K.J.W., K.R.C., F.L., S.D.W., and T.P.W. contributed to the results analysis and interpretation. T.P.W. and S.D.W. supervised the project. J.P. wrote the manuscript. All authors contributed to the discussion of the results and revision of the manuscript.

Tantalum Nitride Electron-Selective Contact for Crystalline Silicon Solar Cells

Abstract: The work presented in this publication was supported by King Abdullah University of Science and Technology (KAUST), through the Competitive Research Grant. Research performed at the Australian National University was supported by the Australian Government through the Australian Research Council (Discovery Project: DP150104331).

Transmission Electron Microscopy Studies of Transition Metal Oxides Employed as Carrier Selective Contacts in Silicon Solar Cells

Abstract: The focus of this work is on the nano-scale characterization of transition metal oxides employed as carrier selective contacts in crystalline silicon (c-Si) solar cells using crosssectional transmission electron microscopy (TEM). Both electronselective (titanium dioxide, TiO 2 ) and hole-selective (molybdenum oxide, MoO x ; tungsten oxide, WO x textbf) contacts were investigated. High-resolution TEM (HRTEM) images were obtained with a FEI Tecnai F30 TEM.

Hole blocking layers for electronic devices and method of producing an electronic device having a hole-blocking layer

Abstract: A photovoltaic device includes an energy absorbing semiconductor substrate, a titanium nitride and/or tantalum nitride hole-blocking layer electrically coupled to the energy absorbing semiconductor substrate, and first and second electrodes electrically coupled to the energy absorbing semiconductor substrate.

Tantalum Nitride Hole-Blocking Layer for Efficient Silicon Solar Cells

Abstract: Minimizing carrier recombination losses at contact regions by using carrier-selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high-efficiency, low-cost crystalline silicon (c-Si) solar cells. Here we present a novel and stable metal nitride based hole-blocking layer for efficient silicon solar cells.The ALD-deposited tantalum nitride (TaN x ) films are demonstrated to provide excellent holeblocking property on silicon surfaces, due to their small conduction band offset and large valence band offset with silicon. Thin TaN x films are found to provide not only moderate surface passivation to silicon surfaces, but also allow a relatively low contact resistivity at the TaN x n-Si heterojunctions. An efficiency over 20% is achieved on n-type silicon solar cells featuring a simple full-area electron-selective TaN x contact, representing an absolute efficiency gain of 4.0% over the control device without TaN x contact.