Y
Y.T. Tang
Researcher at University of Southampton
Publications - 11
Citations - 135
Y.T. Tang is an academic researcher from University of Southampton. The author has contributed to research in topics: MOSFET & Transconductance. The author has an hindex of 4, co-authored 10 publications receiving 135 citations.
Papers
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Journal ArticleDOI
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
Sarah H. Olsen,Anthony O'Neill,L.S. Driscoll,K.S.K. Kwa,Sanatan Chattopadhyay,A.M. Waite,Y.T. Tang,A.G.R. Evans,D. J. Norris,A. G. Cullis,Douglas J. Paul,D. J. Robbins +11 more
TL;DR: In this paper, a novel layer structure comprising Si/Si/sub 0.7/Ge/Sub 0.3/ virtual substrate (VS) offers improved performance advantages and a strain-compensated structure.
Journal ArticleDOI
Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs
Sarah H. Olsen,Anthony O'Neill,L.S. Driscoll,Sanatan Chattopadhyay,K.S.K. Kwa,A.M. Waite,Y.T. Tang,A.G.R. Evans,Jing Zhang +8 more
TL;DR: On-state and off-state performance of Si-SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition in this article.
Journal ArticleDOI
Thermal oxidation of strained si/sige: impact of surface morphology and effect on mos devices
Sarah H. Olsen,Anthony O'Neill,D. J. Norris,A. G. Cullis,Steve Bull,Sanatan Chattopadhyay,K.S.K. Kwa,L.S. Driscoll,A.M. Waite,Y.T. Tang,A.G.R. Evans +10 more
TL;DR: In this paper, the impact of large-scale cross-hatching roughness inherent in relaxed SiGe alloys on strained Si oxidation was investigated, and the nanoscale oxide interface roughness and oxidation rate of strained Si were found to correlate with the undulating crosshatch period, increasing and decreasing, respectively, with the degree of surface vicinality.
Journal ArticleDOI
An electrical method for measuring the difference bandgap across the neutral base in SiGe HBT's
Y.T. Tang,J.S. Hamel +1 more
TL;DR: In this article, an electrical method for measuring the bandgap difference across the neutral base of SiGe heterojunction bipolar transistors (HBT's) is described, where the effect of heavy doping on bandgap reduction is investigated.
Proceedings ArticleDOI
The relative performance enhancement of strained-Si and buried channel p-MOS as a function of lithographic and effective gate lengths
M.P. Temple,Douglas J. Paul,Y.T. Tang,A.M. Waite,A.G.R. Evans,Anthony O'Neill,J. Zhang,T.J. Grasby,Evan H. C. Parker +8 more
TL;DR: In this paper, the relative performance enhancement of strained-Si and buried channel p-MOS as a function of lithographic and effective gate lengths were investigated, and the effective gate length (L/sub eff/) was extracted using the shift and ratio technique.