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Meng-Fan Chang

Researcher at National Tsing Hua University

Publications -  317
Citations -  8873

Meng-Fan Chang is an academic researcher from National Tsing Hua University. The author has contributed to research in topics: Static random-access memory & Resistive random-access memory. The author has an hindex of 41, co-authored 281 publications receiving 5538 citations. Previous affiliations of Meng-Fan Chang include TSMC & Tsinghua University.

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Journal ArticleDOI

Neuro-inspired computing chips

TL;DR: The development of neuro-inspired computing chips and their key benchmarking metrics are reviewed, providing a co-design tool chain and proposing a roadmap for future large-scale chips are provided and a future electronic design automation tool chain is proposed.
Journal ArticleDOI

Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric

TL;DR: Pentacene organic thin-film transistors (OTFTs) with a high-kappa HfLaO dielectric were integrated onto flexible polyimide substrates as discussed by the authors.
Proceedings ArticleDOI

A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

TL;DR: This work proposes process/resistance variation-insensitive read schemes for embedded RRAM to achieve fast read speeds with high yields and an embedded mega-bit scale, single-level-cell (SLC) RRAM macro with sub-8ns read-write random-access time is presented.
Proceedings ArticleDOI

24.1 A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based AI Edge Processors

TL;DR: This work proposes a serial-input non-weighted product (SINWP) structure to optimize the tradeoff between area, tMAC and EMAC, and a down-scaling weighted current translator and positive-negative current- subtractor (PN-ISUB) for short delay, a small offset and a compact read-path area.
Proceedings ArticleDOI

A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors

TL;DR: Many artificial intelligence (AI) edge devices use nonvolatile memory (NVM) to store the weights for the neural network (trained off-line on an AI server), and require low-energy and fast I/O accesses.