K
K. C. Hsu
Researcher at National Tsing Hua University
Publications - 17
Citations - 421
K. C. Hsu is an academic researcher from National Tsing Hua University. The author has contributed to research in topics: Computer science & Metal gate. The author has an hindex of 8, co-authored 13 publications receiving 340 citations.
Papers
More filters
Proceedings ArticleDOI
A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors
Wei-Hao Chen,K. C. Li,Wei-Yu Lin,K. C. Hsu,Pin-Yi Li,Cheng-Han Yang,Cheng-Xin Xue,En-Yu Yang,Yen-Kai Chen,Yun-Sheng Chang,Tzu-Hsiang Hsu,Ya-Chin King,Chorng-Jung Lin,Ren-Shuo Liu,Chih-Cheng Hsieh,Kea-Tiong Tang,Meng-Fan Chang +16 more
TL;DR: Many artificial intelligence (AI) edge devices use nonvolatile memory (NVM) to store the weights for the neural network (trained off-line on an AI server), and require low-energy and fast I/O accesses.
Proceedings ArticleDOI
A 462GOPs/J RRAM-based nonvolatile intelligent processor for energy harvesting IoE system featuring nonvolatile logics and processing-in-memory
Fang Su,Wei-Hao Chen,Lixue Xia,Chieh-Pu Lo,Tianqi Tang,Zhibo Wang,K. C. Hsu,Ming Cheng,Jun-Yi Li,Yuan Xie,Yu Wang,Meng-Fan Chang,Huazhong Yang,Yongpan Liu +13 more
TL;DR: This work presents the first nonvolatile processor capable of general as well as neural network computing in addition to the first integrated chip using RRAM-based PIM.
Journal ArticleDOI
Improved Capacitance Density and Reliability of High- $ \kappa$ $\hbox{Ni}/\hbox{ZrO}_{2}/\hbox{TiN}$ MIM Capacitors Using Laser-Annealing Technique
TL;DR: In this article, high-κ Ni/ZrO2/TiN metal-insulator-metal capacitors with a very high 52-fF/μm2 capacitance density, a low leakage current of 1.6 × 10-7A/cm2, and good ten-year reliability with a small ΔC/C of 0.7% at 2 V.
Journal ArticleDOI
A ReRAM-Based Nonvolatile Flip-Flop With Self-Write-Termination Scheme for Frequent-OFF Fast-Wake-Up Nonvolatile Processors
Albert Lee,Chieh-Pu Lo,Chien-Chen Lin,Wei-Hao Chen,K. C. Hsu,Zhibo Wang,Fang Su,Zhe Yuan,Qi Wei,Ya-Chin King,Chrong Jung Lin,Hochul Lee,Pedram Khalili Amiri,Kang-Lung Wang,Yu Wang,Huazhong Yang,Yongpan Liu,Meng-Fan Chang +17 more
TL;DR: The resistive RAM (ReRAM)-based nvFF with self-write termination (SWT) and reduced loading on power rail is proposed to achieve reliable and 26+ times faster restore operation compared with previous nVFFs.
Proceedings ArticleDOI
TSV-free FinFET-based Monolithic 3D + -IC with computing-in-memory SRAM cell for intelligent IoT devices
Fu-Kuo Hsueh,Hsiao-Yun Chiu,Chang-Hong Shen,Jia-Min Shieh,Ying-Tsan Tang,Chih-Chao Yang,Hsiu-Chih Chen,Wen-Hsien Huang,Bo-Yuan Chen,Kun-Ming Chen,Guo-Wei Huang,Wei-Hao Chen,K. C. Hsu,Srivatsa Srinivasa,Nicholas Jao,Albert Lee,Hochul Lee,Vijaykrishnan Narayanan,Kang-Lung Wang,Meng-Fan Chang,Wen-Kuan Yeh +20 more
TL;DR: In this article, the authors presented the first monolithic 3D vertical cross-tier computing-in-memory (CIM) SRAM cell fabricated using low cost TSV-free FinFET-based 3D+-IC technology.