Yang Feng

TL;DR: The observation of the quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb)2Te3, a magnetic topological insulator shows a plateau in the Hall resistance as a function of the gating voltage without any applied magnetic fields, signifying the achievement of the QAH state.

TL;DR: By codoping Cr and V magnetic elements in (Bi,Sb)2 Te3 TI, the temperature of the QAH effect can be significantly increased such that full quantization is achieved at 300 mK and zero-field Hall resistance of 0.97 h/e2 is observed at 1.5 K.

TL;DR: It is proposed that the chiral edge states residing at the magnetic domain boundaries, which are unique to a quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.

TL;DR: The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)2 Te3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band-bending, and ferromagnetic exchange energy.

TL;DR: In this article, the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device were investigated, and the authors observed a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies.