Xi Chen

TL;DR: The observation of the quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb)2Te3, a magnetic topological insulator shows a plateau in the Hall resistance as a function of the gating voltage without any applied magnetic fields, signifying the achievement of the QAH state.

TL;DR: This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new topologically insulating devices based on well-established semiconductor technology.

TL;DR: This work demonstrates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry.

TL;DR: Thin films of magnetically doped topological insulators are found to possess carrier-independent long-range ferromagnetic order with perpendicular magnetic anisotropy, demonstrating this material as a promising system to realize the quantized anomalous Hall effect.

TL;DR: Strong evidence is presented that the bulk band topology is the fundamental driving force for the magnetic quantum phase transition in topological insulator films grown by means of molecular beam epitaxy.