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Yasufumi Fujiwara

Researcher at Osaka University

Publications -  270
Citations -  3038

Yasufumi Fujiwara is an academic researcher from Osaka University. The author has contributed to research in topics: Photoluminescence & Luminescence. The author has an hindex of 26, co-authored 266 publications receiving 2737 citations. Previous affiliations of Yasufumi Fujiwara include Hokkaido University & Nagoya University.

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Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

TL;DR: In this article, the first lowvoltage operation of current-injected red emission from a p-type/Eu-doped/n-type GaN light-emitting diode (LED) at room temperature was demonstrated with an applied voltage as low as 3 V under normal lighting conditions.
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Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

TL;DR: In this article, the challenges of attaining red luminescence from GaN under current injection and the methods that have been developed to circumvent them are addressed and a large emphasis is placed on the recent developments of doping GaN with Eu3+ to achieve an efficient red GaN-based LED.
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Direct Observation of Band Structure Modifications in Nanocrystals of CsPbBr3 Perovskite

TL;DR: This work establishes an intimate relation between quantum dot size and even shape and its bandgap energy on a single object level and shows the presence of an effective coupling between proximal dots in an ensemble, leading to band structure modification.
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Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy

TL;DR: In this paper, the luminescence properties of Eu-doped GaN (GaN:Eu) grown by atmospheric-pressure organometallic vapor phase epitaxy were investigated.