scispace - formally typeset
Y

Yen-Ting Chen

Researcher at University of Texas Health Science Center at Houston

Publications -  66
Citations -  1241

Yen-Ting Chen is an academic researcher from University of Texas Health Science Center at Houston. The author has contributed to research in topics: Field-effect transistor & MOSFET. The author has an hindex of 20, co-authored 66 publications receiving 1032 citations. Previous affiliations of Yen-Ting Chen include Memorial Hermann Healthcare System & University of Texas at Austin.

Papers
More filters
Journal ArticleDOI

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Yao-Feng Chang, +7 more
- 28 Jul 2014 - 
TL;DR: In this paper, the authors investigated multilevel programing and charge transport characteristics of intrinsic SiO2-based resistive switching memory using TaN/SiOx/n++Si (MIS) and TiW/SiO2/TiW (MIM) device structures.
Journal ArticleDOI

A Unifying Pathophysiological Account for Post-stroke Spasticity and Disordered Motor Control.

Sheng Li, +4 more
- 10 May 2019 - 
TL;DR: This account highlights the importance of ipsilateral PM/SMA-cortico-reticulospinal tract hyperexcitability from the contralesional motor cortex as a result of disinhibition after stroke and provides a pathophysiological basis for post-stroke spasticity and related movement impairments, such as abnormal motor synergy and disordered motor control.
Journal ArticleDOI

Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

Han Zhao, +6 more
- 08 Mar 2010 - 
TL;DR: In this article, the authors have applied single InP barrier layer with different thicknesses and InP/In0.52Al0.48As double-barrier layer to In0.7Ga0.3As Al2O3 metal-oxide-semiconductor field effect transistors (MOSFETs).
Journal ArticleDOI

Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization

Yao-Feng Chang, +7 more
- 28 Jul 2014 - 
TL;DR: In this article, the physical mechanisms of unipolar resistive switching in SiO2-based resistive memory were investigated using TaN/SiO2/n++Si and TiW/SiOx/TiW device structures.
Journal ArticleDOI

Electroforming and resistive switching in silicon dioxide resistive memory devices

Burt Fowler, +9 more
- 20 Feb 2015 - 
TL;DR: In this paper, the authors investigated SiO2-based resistive switching in resistive memory devices by controlling the annealing temperature, etching time, and operating ambient.